| Allicdata Part #: | BSS192PH6327XTSA1-ND |
| Manufacturer Part#: |
BSS192PH6327XTSA1 |
| Price: | $ 0.14 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 250V 190MA SOT89 |
| More Detail: | P-Channel 250V 190mA (Ta) 1W (Ta) Surface Mount PG... |
| DataSheet: | BSS192PH6327XTSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 0.12686 |
| Vgs(th) (Max) @ Id: | 2V @ 130µA |
| Package / Case: | TO-243AA |
| Supplier Device Package: | PG-SOT89 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 104pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.1nC @ 10V |
| Series: | SIPMOS™ |
| Rds On (Max) @ Id, Vgs: | 12 Ohm @ 190mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.8V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 190mA (Ta) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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BSS192PH6327XTSA1 is a through-hole packaged N-channel transistor suitable for high power switching applications. It is an essential device for electrical and electronic products, and its application field is wide. BSS192PH6327XTSA1 transistors can be used in many different applications, including power management, digital signal processing, and radiofrequency signal processing.
BSS192PH6327XTSA1 has a number of advantages over other types of transistors, such as its small size, low cost, high power switching capability, and good thermal performance. In general, N-channel transistors are well-suited for high current and high voltage applications, and BSS192PH6327XTSA1 has additional advantages such as low input capacitance and low reverse leakage current.
The main purpose of the BSS192PH6327XTSA1 is to serve as an electronic switch. The device turns on and off as a result of an input electrical signal, and the signal can either be high or low. The on-state resistance of the device is typically very low, allowing it to switch large amounts of current. Depending on the design of the circuit, the power draw of the device can be adjusted in order to achieve the desired output.
In order to understand how BSS192PH6327XTSA1 works, it is important to first understand the three-terminal FET structure it comprises. The BSS192PH6327XTSA1 contains a gate, a source, and a drain. The gate is the input for the transistor, and a voltage is applied to control the current flow. The source and the drain define the path of the current. When the voltage applied to the gate is high, the current flows from source to drain; when the gate voltage is low, the current is cut off completely, resulting in the device being turned off.
Power MOSFETs are used in a variety of electronic circuits, such as power supplies, audio amplifiers, and motor controllers. They are particularly useful in power management applications. BSS192PH6327XTSA1 is a power MOSFET, and it provides excellent performance in power management applications. It is capable of switching a large current and can provide very high switching speeds.
BSS192PH6327XTSA1 is an ideal choice for high power applications. Its low on-state resistance and high switching speed make it ideal for high-current applications. It is also highly reliable and has a long service life. Its small size makes it a popular choice in many electronic applications.
In summary, BSS192PH6327XTSA1 is a three-terminal N-channel transistor and is suitable for high power switching applications. Its low on-state resistance and high switching speed give it excellent performance in many different applications. Its small size and low cost make it a popular choice for many applications. It is an essential device for electrical and electronic products, and its application field is wide.
The specific data is subject to PDF, and the above content is for reference
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BSS192PH6327XTSA1 Datasheet/PDF