BSS123 Discrete Semiconductor Products |
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| Allicdata Part #: | BSS123NTR-ND |
| Manufacturer Part#: |
BSS123 |
| Price: | $ 0.01 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 170MA SOT-23 |
| More Detail: | N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount... |
| DataSheet: | BSS123 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.00800 |
| 10 +: | $ 0.00776 |
| 100 +: | $ 0.00760 |
| 1000 +: | $ 0.00744 |
| 10000 +: | $ 0.00720 |
| Gate Charge (Qg) (Max) @ Vgs: | 2.5nC @ 10V |
| Base Part Number: | BSS123 |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 360mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 73pF @ 25V |
| Vgs (Max): | ±20V |
| Series: | -- |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Rds On (Max) @ Id, Vgs: | 6 Ohm @ 170mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 170mA (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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Field-effect transistors have evolved through several generations in the past thirty years. BSS123 stands for an enhancement-mode metal oxide semiconductor field-effect transistor (MOSFET) and, unlike an insulated-gate bipolar transistor (IGBT), contains no gate-to-source voltage (VGS), which makes it easier to control. The BSS123 MOSFET is widely used in switching circuits, power control, audio amplifying and radio-frequency amplification applications.
The BSS123 MOSFET consists of four components: a gate, source, drain, and substrate. The gate is connected to a voltage source which controls the flow of electrons from the source to the drain. The voltage that is applied to the gate is referred to as VGS, and the potential between the two is denoted by VDS. The substrate is grounded and serves as a shield from external noise.
The BSS123 MOSFET works on the principle of the transistor action. When the voltage applied to the gate is low, the BSS123 MOSFET does not allow any current to flow from the source to the drain, thus acting like an open switch. As the voltage applied to the gate increases, the MOSFET allows more and more current to flow, till it reaches its maximum value. At this point, the MOSFET acts like a closed switch allowing current to flow freely from the source to the drain.
The BSS123 MOSFET is widely used in switching circuits, power control, audio amplifying, and radio-frequency amplification applications. It is considered to be the most efficient switching device as it has a very low on-resistance and fast response time. Due to its low on-resistance, it is able to switch large currents, which makes it ideal for driving power transistors. In addition, it can be used in audio amplifying applications, where it can be used to switch or amplify small signals. The BSS123 MOSFET can also be used in radio-frequency amplification applications, where it can provide gain or amplification of high-frequency signals.
The BSS123 MOSFET is also used for switching circuits in computers and embedded systems, as it can control the flow of current in the power-supply line. It can also be used to amplify radio-frequency signals, as well as providing isolation between circuits. The BSS123 MOSFET is also used in switching regulators, where it is used to control the output voltage of the regulator.
In summary, the BSS123 MOSFET is a popular MOSFET that is used in a variety of different applications. Its low on-resistance, fast response time and low gate-source voltage make it ideal for switching circuits, power control, audio amplification, and radio-frequency amplification. Its ease of use and flexibility make it a popular choice in a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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| BSS138LT1 | ON Semicondu... | -- | 1000 | MOSFET N-CH 50V 200MA SOT... |
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| BSS119NH6433XTMA1 | Infineon Tec... | 0.06 $ | 1000 | MOSFET N-CH 100V 190MA SO... |
| BSS123-7 | Diodes Incor... | -- | 1000 | MOSFET N-CH 100V 170MA SO... |
| BSS138LT3 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 50V 200MA SOT... |
| BSS169 E6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
| BSS139H6906XTSA1 | Infineon Tec... | 0.18 $ | 1000 | MOSFET N-CH 250V 100MA SO... |
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| BSS123L6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
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| BSS123LT3G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
| BSS159NH6327XTSA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 230MA SOT... |
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| BSS138NH6327XTSA2 | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 230MA SOT... |
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BSS123 Datasheet/PDF