BSS138N-E6327 Discrete Semiconductor Products

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The BSS138N-E6327 is a depletion-mode n-channel enhancement mode field effect transistor (MOSFET). It is the most popular depletion-mode n-channel MOSFET, manufactured by ON Semiconductor, and is used in various applications where a high-voltage, high-current conduction or blocking capability is required. The BSS138N-E6327 is ideal for power switching and logic level shifting applications.

Applications

The BSS138N-E6327 can be used in various applications such as lighting, industrial motor control and switching power converters. Since it operates with low gate voltage and has low on-resistance, it is especially suitable for high-voltage switching applications. In addition, it is an excellent choice for automotive and aerospace applications due to its low on-resistance and high maximum voltage. It is also suitable for applications that require low power consumption, such as pulse-width modulation (PWM) systems.

Working Principle

BSS138N-E6327 is a n-channel MOSFET transistor. It consists of a drain, gate and source terminals. When no voltage is applied to the gate, it acts as an open switch, blocking any current from flowing between the drain and source. When a positive voltage is applied to the gate, it allows current to flow through the n-channel of the transistor. This current flow can be controlled by varying the voltage applied to the gate. Since the BSS138N-E6327 has a low gate-source voltage, it can be used to control large currents without having to supply large amounts of power to the gate. In addition, it is also used in various signal level shifting applications, as it can be switched on or off with low gate voltage.

Conclusion

The BSS138N-E6327 is a depletion-mode n-channel enhancement mode field effect transistor (MOSFET). It is the most popular depletion-mode n-channel MOSFET, manufactured by ON Semiconductor. It is suitable for power switching and logic level shifting applications, and it is an excellent choice for automotive and aerospace applications due to its low on-resistance and high maximum voltage. In addition, it can be used in various signal level shifting applications, as it can be switched on or off with low gate voltage.

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