BUK6610-75C,118 Allicdata Electronics
Allicdata Part #:

1727-5515-2-ND

Manufacturer Part#:

BUK6610-75C,118

Price: $ 0.48
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 75V 78A D2PAK
More Detail: N-Channel 75V 78A (Tc) 158W (Tc) Surface Mount D2P...
DataSheet: BUK6610-75C,118 datasheetBUK6610-75C,118 Datasheet/PDF
Quantity: 9600
800 +: $ 0.42767
Stock 9600Can Ship Immediately
$ 0.48
Specifications
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 158W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5251pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BUK6610-75C,118 is a single N-channel MOSFET commonly found in the electronics industry today. It is a stable device with both good electrical and operational characteristics. This device is designed for high power applications and is available in various sizes and packages with different power ratings.

The BUK6610-75C,118 is a voltage-controlled device. It is an essential part in modern electronic circuitry and is used in a variety of applications. It is most commonly found in power conversion, voltage regulation, and switching applications. The device is characterized by its low on-resistance, low capacitance and low gate charges. The drive current requirements are also very low in comparison to other MOSFETs.

The B UK6610-75C,118 is a N-channel MOSFET which features enhanced level of avalanche ruggedness (ELAR) as well as superior breakdown voltage Rds(on). This is achieved by precision temperature compensation during the manufacturing process. The BUK6610-75C,118 also has low turn-on and reverse recovery times making it ideal for fast switching applications. The device also exhibits excellent switching characteristics for load-switching and source-sinking applications.

The BUK6610-75C,118 works by using three terminals: the gate, the source, and the drain. The drain is the output terminal, with the current flowing into the drain being controlled by the gate. The gate and source are connected internally to a channel of N-type material, which forms the MOSFET. When a voltage is applied to the gate, it forms an inversion layer which allows current to flow from the source to the drain. The voltage applied to the gate determines the resistance between the source and the drain, and thus the amount of current that is allowed to flow through the device.

The BUK6610-75C, 118 is an excellent choice for a wide variety of circuit design applications. Its excellent electrical characteristics, high power rating, and low turn-on time make it ideal for power conversion, voltage regulation, and switching applications. Its stable device characteristics and wide range of packages make it a perfect choice for any circuit design. The BUK6610-75C, 118 is an excellent MOSFET switch for many applications.

The specific data is subject to PDF, and the above content is for reference

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