Allicdata Part #: | 1727-5886-ND |
Manufacturer Part#: |
BUK6E2R0-30C,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 120A I2PAK |
More Detail: | N-Channel 30V 120A (Tc) 306W (Tc) Through Hole I2P... |
DataSheet: | BUK6E2R0-30C,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.8V @ 1mA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 306W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 14964pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 229nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 2.2 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK6E2R0-30C,127 is a single MOSFET semiconductor component. It utilizes a metal oxide semiconductor field-effect transistor in which the gate electrode is isolated by an oxide layer, allowing only gate-controlled conduction and insulation of the primary component parts. It is employed as an electronic switch in a circuit and is used frequently in low side switching.
The BUK6E2R0-30C,127 offers exceptional thermal and electrical properties, making it ideal for harsh environments or applications involving high power dissipation. Its operating temperature range is between -55° C and 175° C, making it suitable for a wide variety of extreme applications.
The BUK6E2R0-30C,127 offers great on-resistance, ensuring excellent switching performance, and gate-to-source capacitance, ensuring minimal switching losses. It also offers excellent avalanche ratings, making it suitable for high voltage applications. Additionally, the low input and output capacitance allows it to be used in high frequency switching applications.
The BUK6E2R0-30C,127 is highly versatile and is employed in a number of application fields. It is used in automation, automotive, power conversion and control, and lighting applications. It is also commonly used in the telecommunications sector, including base stations, switching systems, and mobile phone systems. Additionally, it is employed in power management, robotics, and medical systems.
In terms of its working principle, the BUK6E2R0-30C,127 utilizes the unique properties of the metal oxide semiconductor field-effect transistor (MOSFET). A MOSFET is a unipolar transistor that utilizes an insulated gate to regulate the current flow between the source and the drain. This gate acts as a voltage switch, permitting current to flow through the MOSFET when the required gate voltage is applied. When this voltage is removed, the MOSFET is effectively switched off.
The BUK6E2R0-30C,127 offers exceptional thermal and electrical stability, allowing it to perform reliably in extreme working conditions. It is also highly versatile, meaning that it can be employed in a number of application fields to achieve desired effects.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BUK6Y25-40PX | Nexperia USA... | 0.32 $ | 1000 | BUK6Y25-40P/SOT669/LFPAKP... |
BUK6Y20-30PX | Nexperia USA... | 0.32 $ | 1000 | BUK6Y20-30P/SOT669/LFPAKP... |
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BUK6Y12-30PX | Nexperia USA... | 0.4 $ | 1000 | BUK6Y12-30P/SOT669/LFPAKP... |
BUK6Y15-40PX | Nexperia USA... | 0.4 $ | 1000 | BUK6Y15-40P/SOT669/LFPAKP... |
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