Allicdata Part #: | 1727-7671-2-ND |
Manufacturer Part#: |
BUK6Y57-60PX |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | BUK6Y57-60P/SOT669/LFPAK |
More Detail: | P-Channel 60V 23A (Ta) 66W (Ta) Surface Mount LFPA... |
DataSheet: | BUK6Y57-60PX Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.28256 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 66W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1.2nF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 57 mOhm @ 4.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK6Y57-60PX is a single insulated gate field effect transistors (FETs to MOSFETs). This type of transistor is a band-gap referenced, insulated gate type of device which is extremely efficient in the way it turns on and off signal and power circuits. In order for the device to function properly, it must be connected properly.
Application Field
The BUK6Y57-60PX is primarily used for switching and logic applications. When compared to other MOSFETs, the BUK6Y57-60PX has a higher power handling capability which makes it suitable for use in power switching applications. Additionally, the device has low gate-leakage current so it can be used in high-impedance applications such as gate drivers. The BUK6Y57-60PX also features a fast turn-on and turn-off speed, making it ideal for high frequency switching and logic applications.
Working Principle
The BUK6Y57-60PX works on a principle similar to that of other insulated gate FETs and MOSFETs. The gate voltage is the voltage applied to the gate of the transistor and is of a much lower magnitude than the source and drain voltages. When gate voltage is applied, it creates an electric field, which causes the electrons to flow from source to drain. This current flow is thereby controlled by the gate voltage. The device is sensitive to both the gate voltage and the gate current and can be operated in three general modes: enhancement mode, depletion mode, and linear mode. In the enhancement mode, the voltage is increased to cause more current to flow from source to drain, increasing the current and (ideally) succeeding in turning the device "on". In the depletion mode, the operation is just the opposite, with the voltage decreasing to reduce the current flowing into the drain.
One advantage of the BUK6Y57-60PX over other MOSFETs is the ability to operate at high switching frequencies. The device is capable of switching at frequencies of up to 10 MHz and can also operate in a pulsed mode. This is due to its low channel charge and allow for the device to function reliably in high-frequency applications.
In addition, the device is also highly efficient due to its low turn-on voltage and low gate-source capacitance. The device is capable of achieving high power levels while requiring relatively low amounts of power input, making it an ideal choice for power switching applications.
Overall, the BUK6Y57-60PX is an excellent choice for power and logic applications that require high efficiency and switching speed. Its low gate-leakage current and fast turn-on/turn-off speed allow for it to be used in applications that require high power and speed, while the low channel charge makes the device suitable for high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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