BUK6218-40C,118 Allicdata Electronics
Allicdata Part #:

1727-5509-2-ND

Manufacturer Part#:

BUK6218-40C,118

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 40V 42A DPAK
More Detail: N-Channel 40V 42A (Tc) 60W (Tc) Surface Mount DPAK
DataSheet: BUK6218-40C,118 datasheetBUK6218-40C,118 Datasheet/PDF
Quantity: 7500
2500 +: $ 0.20328
Stock 7500Can Ship Immediately
$ 0.22
Specifications
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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The BUK6218-40C,118 is a low on-state resistance, 3-terminal silicon N-channel enhancement mode power MOSFET (metal-oxide semiconductor field-effect transistor). This product is designed to provide outstanding performance in terms of power consumption, switching speed and reliability.

Applications

The BUK6218-40C,118 can be used in a wide variety of automotive, industrial and consumer applications including: motor control, DC-DC converters, mobile power management, LED lighting, digital applications, switch mode power supplies, battery management, and various security systems.

It is also utilized in automative application such as load switching, power supply and battery management. Its excellent operating temperature tolerance and current handling capacity make it suitable for a wide range of automotive applications.

Working Principle

The BUK6218-40C,118 uses a 3-terminal MOSFET, which has a source, a drain and a gate. When a voltage is applied to the gate terminal of the MOSFET, electrons in the channel are either filled or depleted depending on the type of device. In the case of an N-channel MOSFET, applied voltage to the gate causes an excess of electrons to drift in and out of the channel, creating an accumulation of negative charge in the channel. This in turn increases the channel’s resistance and lowers the flow of current through the MOSFET.

The size of the gate voltage required to achieve a certain level of drain current is also directly proportional to the threshold voltage or VTH. This is the voltage that is required to turn on the device fully. Additionally, this voltage determines the on-state resistance of the MOSFET. This product has a low VTH and low on-state resistance which makes it an ideal choice for switching applications.

Conclusion

The BUK6218-40C,118 is an N-channel enhancement mode power MOSFET. This device offers superior performance for power consumption, switching speed and reliability. It is versatile and can be used in a variety of applications, including motor control, DC-DC converters, LED lighting, switch mode power supplies and automotive load switching. The BUK6218-40C,118 uses a 3-terminal MOSFET, which has a low VTH and low on-state resistance, making it an ideal choice for switching applications.

The specific data is subject to PDF, and the above content is for reference

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