BUK6Y12-30PX Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	SC-100, SOT-669, 4-LFPAK
Supplier Device Package:	LFPAK56, Power-SO8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	106W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2.88nF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	60nC @ 10V
Series:	Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs:	12 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	67A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The BUK6Y12-30PX is a MOSFET type transistor that is categorized in the category of single field-effect transistors (FETs) under the acronym BUK. It is a cylindrical device that comes with a cut-out centered at the back which provides it with a high level of application versatility. It is very useful for output stage applications where its remarkable high power-handling capability comes into play. Its performance is of high quality and it continues to meet its users’ expectations in terms of excellent design compatibility, cost-efficiency and reliability.

Application Fields

The BUK6Y12-30PX can be used for a diverse range of application fields. Thanks to its incredible nonlinear characteristics and excellent heat sink capabilities, it can be applied in a variety of embedded systems like electric vehicles and in factory automation.Its high power-handling capacity also makes it a great choice for use in motor control, analog switches and motor-drive current regulation.Thanks to its excellent thermal performance, it can be used in high-current applications such as DC motor drives and power supplies in motor drives and electric vehicles.

Working Principle

The BUK6Y12-30PX is a type of MOSFET which is a type of Field-Effect Transistor (FET). This type of MOSFET has an insulated-gate that is used to control the flow of electric current between the source and the drain.The insulated-gate is composed of a gate oxide layer, a gate electrode, and a substrate. When a voltage is applied to the gate electrode, it creates an electric field which modulates the current through the device. The electric field creates an inversion layer between the gate oxide and the substrate, which enables a constant electric current to flow through the device. This inversion layer is known as the threshold voltage and can be controlled by adjusting the gate’s voltage.

Conclusion

The BUK6Y12-30PX is a reliable and cost-efficient single FET MOSFET type transistor. It is ideal for applications that require a high power-handling capacity such as electric vehicles and motor control devices. Its excellent thermal performance and nonlinear characteristics, makes it a practical solution for a range of embedded systems. Finally, its working principle is based on the modulation of the current through the device by creating an electric field through the gate electrode.

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