BUK6C3R3-75C,118

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MOSFETs (metal oxide semiconductor field effect transistors) are strong, switching-type semiconductor components that rely on the flow of electrons and a physical barrier between conducting channels. As the flow of electrons is regulated through the MOSFET, its act as a variable resistor determines the input control voltage and output current. These components are commonly found in computers, hybrids, motors, RF and microwave amplifiers, and other modern applications as well.

BUK6C3R3-75C,118 is a type of MOSFET (metal oxide semiconductor field effect transistor). It is an n-channel, very small, low-Threshold MOSFET (V_th = only 0.72V) that has drain-source voltage of -6V and drain-source current of 8A. The Gate-source voltage of BUK6C3R3-75C,118 is 4.2V. It has a resistance of 0.11Ω and its power dissipation is 75W.

The application field of BUK6C3R3-75C,118 includes telecommunication systems, electrial switching and drive circuits, speed controls and power management. It can be used in low voltage, low current applications such as cellular phones, portable devices and laptop computers. The device is especially suitable for switching of small-current circuits, making it an ideal choice for portable and low-power applications. BUK6C3R3-75C,118 is also good for use in audio power amplifier circuits and various other applications where low on-state resistance is required.

The working principle of BUK6C3R3-75C,118 is based on the MOSFET transistors. When a positive voltage is applied at the Gate (G) of the MOSFET, electrons in the Source (S) region of the transistor will be driven towards the Drain (D) region. This creates a conductive channel between the S and D, allowing current to flow between the two. This process is known asChannel generation. When the voltage at the Gate is removed, the channel automatically disappears and no current can flow between the S and D.

To control the resistance between S and D, an input voltage is applied to the Gate. When the voltage applied to the Gate increases, the resistance between the Source and Drain decreases. This reduces the current flow between the two regions, resulting in less power being dissipated. Conversely, when the voltage applied to the Gate decreases, the resistance between the Source and Drain increases, thus increasing the current flow and power dissipation.

In summary, the BUK6C3R3-75C,118 is a MOSFET component based on an n-channel, very small, low-Threshold design. It is suitable for low voltage, low current applications such as cellular phones, portable devices and laptop computers. The component has applications in telecommunication systems, electrical switching and drive circuits, speed controls and power management, and is also good for use in audio power amplifier circuits. Its working principle is based on the MOSFET transistor, in which an input voltage is applied at the Gate to control the resistance between the Source and Drain.

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