Allicdata Part #: | BUK6246-75C,118-ND |
Manufacturer Part#: |
BUK6246-75C,118 |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 75V 22A DPAK |
More Detail: | N-Channel 75V 22A (Tc) 60W (Tc) Surface Mount DPAK |
DataSheet: | BUK6246-75C,118 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.18225 |
Vgs(th) (Max) @ Id: | 2.8V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1280pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 21.4nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 46 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK6246-75C,118 is a single type power MOSFET that belongs to the field effect transistor (FET) family. This component offers high power handling capability, low on-resistance, and excellent ESD performance, making it an ideal choice for a number of switching and power management applications. In this article, we will explore the application fields and working principle of the BUK6246-75C,118.
Application Fields of BUK6246-75C,118
The BUK6246-75C,118 is ideal for use in a variety of switching and power management applications. Some of the most common applications include:
- Switch mode power supplies
- Lighting dimming
- DC-DC converters
- Motor drives
- Crane and hoist systems
The BUK6246-75C,118 is a high power MOSFET, with an on-resistance of 118 mΩ and a maximum drain-source voltage of 75 V. This makes the component ideal for use in high power applications, such as crane and hoist systems, where high load currents and voltages are required. The component can be used at junction temperatures up to +150°C without derating.
Working Principle of BUK6246-75C,118
The BUK6246-75C,118 is an enhancement mode MOSFET. This type of MOSFET uses a P-type semiconductor material as the input gate. When a voltage is applied to the gate, electrons in the P-type material are attracted to the gate, which in turn induces a current flow between the source and drain terminals of the FET. This is known as "channel enhancement" and is the underlying principle of operation for enhancement mode MOSFETs.
When the voltage applied to the gate is greater than the threshold voltage of the FET, electrons in the P-type material will be attracted to the channel and form a channel enhancement region. This channel enhancement causes a significant increase in the current between the source and drain terminals, allowing the FET to effectively control the current flow. The on-resistance of the BUK6246-75C,118 is 118 mΩ and the maximum drain-source voltage is 75 V.
The BUK6246-75C,118 also features excellent ESD protection, with a Human-Body Model (HBM) rating of 2 kV and a Machine Model (MM) rating of 400 V. This ensures that the component is protected from electrical surges and transient voltage spikes, making it suitable for use in a variety of industrial and commercial applications.
In summary, the BUK6246-75C,118 is a single type power MOSFET that has a number of applications in switching and power management. The component offers a high power handling capability, low on-resistance, and excellent ESD protection, making it an ideal choice for a variety of applications. The component utilizes an enhancement mode MOSFET design, which allows it to effectively control current flow between the source and drain terminals when a voltage is applied to the gate.
The specific data is subject to PDF, and the above content is for reference
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