BUK626R2-40C,118

BUK626R2-40C,118 Application Field and Working Principle

BUK626R2-40C,118 is a N-channel Enhancement Mode Field-Effect Transistor (FET). It belongs to the single MOSFET family, and is widely used in high speed switching applications. This device is typically used as a switch in closed loop feedback control circuits, such as with high frequency power converters. It’s widely applied in multiple industries, including telecommunications, consumer electronics, automotive and industrial applications.

The BUK626R2-40C,118 is a depletion mode FET and has an electronically programmable vertical gate. This means that when the gate of the FET is biased below the threshold voltage, the FET operates in a linear region and the current transfer ratio of the FET varies linearly with gate voltage. Between the linear and saturation regions, an current plateau is also present. This means that the current transfer ratio of the FET is a constant until the gate voltages exceeds a certain threshold value and only then does the current transfer ratio increase.

The BUK626R2-40C,118 offers improved maximum voltage (V_max) and improved R_DS(on), making it ideal for high speed switching applications with relatively high load current demands. The zero gate voltage V_GS is also important, implying that when the gate voltage is zero, the FET is fully on and allows a large volume of current to be passed through the channel. This function is particularly useful when power transistors are utilized in highly controlled applications, as it enables the user to rapidly switch on and off the device with no additional controls.

In addition to its excellent maximum voltage, the BUK626R2-40C,118 also offers excellent switching thresholds and low capacitance values. Both of these properties are important for high speed switching systems, such as with switching power supplies, as they improve the efficiency of the system and reduce the amount of power consumption. These characteristics also minimize the amount of total power consumption during switching operations.

Also, the BUK626R2-40C,118 offers a high input impedance, which helps to ensure that the device remains stable under high voltage conditions in order to avoid unwanted noise and oscillations. This allows the FET to be used at frequencies up to several GHz, providing high speed switching capabilities. Furthermore, the low gate charge value of the device helps reduce the amount of power consumption at high voltage levels.

In conclusion, the BUK626R2-40C,118 is an ideal device to use in various high speed switching applications, due to its excellent maximum voltage, low capacitance values, high input impedance, and low gate charge value. Its linear region operation, programmable vertical gate, and high speed switching capabilities make it ideal for a variety of industries such as telecommunications, consumer electronics, automotive and industrial applications.