BUK6Y15-40PX Discrete Semiconductor Products |
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Allicdata Part #: | 1727-7669-2-ND |
Manufacturer Part#: |
BUK6Y15-40PX |
Price: | $ 0.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | BUK6Y15-40P/SOT669/LFPAK |
More Detail: | P-Channel 40V 63A (Ta) 106W (Ta) Surface Mount LFP... |
DataSheet: | BUK6Y15-40PX Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.35863 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 106W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2.47nF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 63A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK6Y15-40PX is a N-channel enhancement mode vertical DMOS FET. It is a single, U-shaped, enhancement mode vertical DMOS FET designed to be used in digital logic, interface, and switching applications. The BUK6Y15-40PX has a maximum drain-source voltage of up to 40 V, a maximum drain current of 6 A, and a maximum power dissipation of 18 W.
The BUK6Y15-40Px is used in applications where high-voltage switching and low-noise switching is desired. These include applications in power conversion and in power supplies for communications equipment, as well as in other types of equipment. It is also used in LED lighting and displays, as well as in drives for motors.
The working principle of the BUK6Y15-40Px is based on the principle of capacitance. The N-channel MOSFET allows electrons to flow from the source to the drain, provided the gate is low enough. When the source is connected to the voltage source and the drain is connected to a load, the transistor conducts when the gate is more negative than a certain threshold voltage. When the gate voltage is increased, the transistor stops conducting, thus allowing the load to be switched off.
The safe operating area of the BUK6Y15-40Px is limited by the maximum drain current and the maximum drain-source voltage. It is important to ensure the transistor is never exposed to current or voltage values that exceed these limits, as this may damage or destroy the device. The maximum transconductance of this device is typically around 250 mS.
The BUK6Y15-40Px is a widely used device in commercial and automotive applications due to its robustness and stability. It is available in both through-hole and surface-mount packages, making it suitable for both manual and automated assembly. The device is surface-mounted on a printed circuit board, ensuring reliable connections and high-performance operation.
In conclusion, the BUK6Y15-40Px is a single enhancement-mode vertical DMOS FET which is widely used in commercial and automotive applications. Its working principle is based on the principle of capacitance and it can be used for switching and low-noise applications. It is capable of handling up to 6A current and 40V voltage, and is available in both through-hole and surface-mount packages.
The specific data is subject to PDF, and the above content is for reference
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