BUK6C2R1-55C,118

Vgs(th) (Max) @ Id:	2.8V @ 1mA
Package / Case:	TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	16000pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	253nC @ 10V
Series:	Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs:	2.3 mOhm @ 90A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	228A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The BUK6C2R1-55C,118 transistor is a type of field-effect transistor (FET) capable of adhering to a variety of applications. Its versatile characteristics make it suitable for use in analog and digital circuits. The transistor is designed to be an effective and efficient solution for telecommunication, data processing, computing, and security systems.A field-effect transistor is a type of semiconductor device in which a current can be controlled by an electric field. Unlike a typical transistor, the FET works by having a metal-oxide-semiconductor (MOS) junction embedded into its gate. This junction creates an electric field that can either increase or degrade the flow of electrons in the channel region of the transistor.The BUK6C2R1-55C,118 FET operates according to the enhancement-mode MOSFET technology. This means that the device will start to conduct current only when the channel is exposed to a higher voltage than the threshold voltage. In contrast, depletion-mode MOSFETs require a lower voltage than the threshold voltage before it begins to conduct current.The working principle behind BUK6C2R1-55C,118 transistors is based on the capacitive connection between the drain, source, and gate. As voltage is applied across the drain and source of the transistor, it forms an electric field that extends the gate. This gate will then create a field of electrons across the channel region, which controls the current flow between the two terminals.Due to its versatile characteristics and powerful performance, the BUK6C2R1-55C,118 is an ideal choice for a wide range of applications. It is used in analog and digital circuits, power switching, audio electronics, and industrial electronics. It is often used in communication and data processing systems, such as radio systems, cellular networks, and switching system. Additionally, it is also used in computing, consumer electronics, and various other applications.Moreover, the BUK6C2R1-55C,118 transistor offers reliable transportation from the source to the drain with its low on-resistance and static drain-source saturation voltage. Its wide operating temperature range and low thermal resistance ensure stable performance even at high temperatures. Furthermore, the device features anti-parallel protective diodes that provide additional protection against short circuits.Overall, the BUK6C2R1-55C,118 transistor is an efficient and reliable FET solution for a variety of applications. Its robust design and versatile characteristics make it an ideal choice for telecommunication, data processing, computing, and security systems. With its low on-resistance, wide operating temperature range, and anti-parallel protection, the transistor ensures enhanced performance and efficiency in its applications.

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