BUK662R7-55C,118

Vgs(th) (Max) @ Id:	2.8V @ 1mA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	306W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	15300pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	258nC @ 10V
Series:	Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs:	2.7 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction of BUK662R7-55C,118

BUK662R7-55C,118 is an N-channel MOSFET transistor with a logic level gate. It is manufactured by Infineon Technologies and is part of their OptiMOS series. This transistor is a field-effect semiconductor device with a single-gate FET (FET) structure. It can be used in many areas and applications, ranging from voltage regulator designs, such as low dropout (LDO) regulators, to power management applications such as battery chargers.

Application Field of BUK662R7-55C,118

The BUK662R7-55C,118 has several key features which make it a suitable choice for many applications. Firstly, the device has a very low gate threshold voltage of - 2.5V which makes it suitable for use in low voltage systems. In addition, the device has an exceptionally low on-state resistance and low gate charge, making it suitable for high current operations and for achieving greater efficiency.The low gate threshold voltage also makes the device suitable for applications that use logic level gates. These include power management circuits and LED drivers. Additionally, the low on-state resistance means that the device can be used for high current switching applications such as motor control and power conversion. Due to the high current capability and low gate charge, the device is also suitable for use in power factor correction (PFC) circuits.

Working Principle of BUK662R7-55C,118

The working principle of the BUK662R7-55C,118 is very similar to that of a traditional FET. It consists of a source, a drain, a gate, and an oxide layer. When a potential is applied between the source and the gate, the oxide layer becomes connected to the source, creating a conductive channel between the source and the drain. This channel allows current to flow between the source and the drain, allowing the transistor to act as a switch.The low gate threshold voltage of the BUK662R7-55C,118 allows for the operation of the device at a wider range of voltages compared to traditional FETs, and also makes it suitable for logic level gates. The low on-state resistance and the low gate charge are responsible for the device’s high current capabilities, allowing it to be used for high current switching applications and PFC circuits.

Conclusion

The BUK662R7-55C,118 is an N-channel MOSFET transistor with a logic level gate. It is manufactured by Infineon Technologies and is part of their OptiMOS series. This transistor is suitable for use in many applications due to its low gate threshold voltage, low on-state resistance and low gate charge. The device is suitable for use in low voltage systems, high current applications and logic level gates. The working principle of the device is the same as that of a traditional FET.

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