BUK6213-30C,118

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The BUK6213-30C,118 is a single N-Channel Logic Level Enhancement Mode Power MOSFET which has been pre-matched for optimal performance. This device is a semiconductor, specifically a field-effect transistor (FET) which can be used to control and amplify electrical signals. The device is widely employed in a variety of electronic applications due to its robust construction, low biasing requirements and superior electrical performance.

In general, an FET functions by controlling the flow of electrons, or electricity, through a two-terminal gate, known as the gate electrode. When a voltage is applied to the gate, an electric field is created which then modulates the forward current flow between the source and drain electrodes, which magnifies the source-drain current to the gate-source voltage. This ratio, known as the current gain, is one aspect of an FET’s electrical performance, which is further defined in terms of the Power Dissipation, Gain-Bandwidth Product and Efflux Time Constants.

In particular, the BUK6213-30C,118 has been specifically designed for applications where controlling a large amount of current is required, in exceed of 30 A. The device’s capability to efficiently handle large currents make it ideal for applications such as motor control, industrial automation, and consumer electronics. Furthermore, the device’s relatively low biasing requirements mean that it is suitable for use in a range of different scenarios, including portable devices and off-grid installations.

The BUK6213-30C,118 can operate across a wide range of different voltages and frequencies, making it suitable for a wide range of electronic applications. It can also work with a range of other FETs and logic level MOSFETs to create complex circuits and arrays. Additionally, this device is particularly stable at high-temperature operation, making it ideal for applications including automotive systems and military equipment.

In terms of the device’s electrical performance, the BUK6213-30C,118 is renowned for its low leakage current, high speed switching and fast transconductance. This device’s gain-bandwidth is typically in the region of 350MHz to 500MHz, giving it superior electrical performance over many other devices in its class. In addition, this device also features a low gate threshold voltage of 3V, allowing for more accurate control of the device.

Overall, the BUK6213-30C,118 is an impressive single N-Channel Logic Level Enhancement Mode Power MOSFET which offers outstanding electrical performance, making it ideal for applications where high-power, efficient and low-cost operation is required. This device is highly suitable for a variety of industrial, commercial and consumer electronic products, and due to its reliability and superior electrical performance, it is widely used in a range of applications.

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