BUK661R8-30C,118 Discrete Semiconductor Products

The BUK661R8-30C,118 is a single FET (Field Effect Transistor) that is commonly used in power management applications. In a nutshell, this FET can be used to control various types of electronic circuits, including those in power applications. It has several important features, including a high breakdown voltage, which is typically in the +-20V range, and fast switching which is needed in many applications.

The BUK661R8-30C,118 is a P-channel MOSFET (metal oxide semiconductor field-effect transistor). Unlike BJT (bipolar junction transistors), a MOSFET does not rely on current flow through its base in order to function. Instead, a MOSFET is based on voltage control. This means that, by applying a voltage to its gate, the voltage regulated by the transistor can be controlled.

The BUK661R8-30C,118 provides several important features that make it ideal for power management applications. For example, the high breakdown voltage is suitable for driving high-power loads, while the device is also rated to work with a maximum drain source current of 11.8A. The low on-state resistance of the device is also important, as it enables efficient power conversion by minimizing the power loss during operation.

The working principle of a MOSFET is relatively simple. When a positive voltage is applied to the Gate, it causes a pull-up effect on the Drain which, in turn, increases the voltage regulated by the transistor. The voltage controlled by the Gate is typically referred to as the Gate Voltage (Vgs). A higher Gate Voltage will result in a higher voltage regulated at the Drain, while a lower Gate Voltage will lead to a lower voltage regulated at the Drain.

The BUK661R8-30C,118 is mainly used in power management applications, where it can be used to control the voltage levels of devices or systems. For example, it can be used to adjust the voltage levels for current-limiting circuits, temperature controllers, voltage-controlled oscillators, and power supply regulation. This makes it a very versatile device, as it can be used in a wide range of applications. It is also very useful in applications where fast switching is required.

In summary, the BUK661R8-30C,118 is a single FET that is commonly used in power management applications. It is a P-channel MOSFET that has a high breakdown voltage and fast switching, making it ideal for a wide range of applications. It works by controlling the voltage regulated by the transistor and is mainly used to regulate the voltage levels of devices or systems. It is a very versatile device and can be used in a wide range of applications.