Allicdata Part #: | 568-7493-5-ND |
Manufacturer Part#: |
BUK652R6-40C,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 40V 120A TO220AB |
More Detail: | N-Channel 40V 120A (Tc) 263W (Tc) Through Hole TO-... |
DataSheet: | BUK652R6-40C,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.7 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 199nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 11334pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 263W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
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BUK652R6-40C,127 application field and working principle
BUK652R6-40C,127 is a transistor comprised of two types of FETs; Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs), which are unipolar devices, and Enhancement Mode Field Effect Transistors (EMFETs), which are bi-polar devices. A MOSFET is a transistor that works by controlling the flow of current through an insulated gate. EMFETs are transistors that use the electric field to control current, as opposed to applying an electric voltage to the gate. This transistor is ideal for applications where efficient energy transfer is required, such as in power switching. The small size of the BUK652R6-40C,127 also makes it suitable for use in small or complex circuit designs.
The working principle of the BUK652R6-40C,127 is quite simple. It contains two FET transistors, one enhancement-mode and one depletion-mode. The EMFET is connected in series with the MOSFET and acts as a "pre-regulator" to prevent over-load of the MOSFET. The EMFET also helps regulate or control the output voltage, creating a balanced voltage-current relation that produces the highly efficient energy transfer.
The BUK652R6-40C,127 is an ideal transistor for switching applications as it allows for high-speed, low-power switching of up to 600V. It is also able to operate at temperatures ranging from -40C to 127C, allowing for easy installation in a wide variety of applications and in extreme conditions. Furthermore, it provides excellent noise immunity and is resistant to vibration, making it ideal for applications in which signal integrity is a priority.
In summary, the BUK652R6-40C,127 is an ideal FET transistor for power switching applications that require efficient energy transfer. Its small size and wide range of operating temperatures make it suitable for a wide range of applications, while its high-speed, low-power operation and excellent signal integrity make it an ideal choice for complex circuits or applications in which signal integrity is a priority.
The specific data is subject to PDF, and the above content is for reference
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