BUK6E3R4-40C,127

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The BUK6E3R4-40C,127 (often referred to as BUK6E3R4) is an n-channel enhancement-mode field-effect transistor (FET). It is a single FET, meaning it consists of 1 n-MOSFET and does not incorporate any additional transistors. It is typically found in power supply applications, automotive and consumer electronics, motor control, and high frequency switches.

A field-effect transistor is a voltage-controlled device, meaning that the current through the device is controlled by the voltage between the source and the gate. In the case of the BUK6E3R4, the gate is the control element and when it is electrically charged, it will open up a channel of electrons through the FET and electric current will start to flow. This principle is called the enhancement-mode.

The BUK6E3R4 is rated at 40A, has a maximum peak current of 77A, and a drain source voltage of 60V. It has a number of features that make it suitable for applications in power supplies and motor control. For example, it has low on-state resistance, fast switching times, and protection against short-circuits and reverse current. Additionally, the device features “selectable lock”, allowing the FET to be locked in a high or low state, allowing it to be used in a variety of applications.

The BUK6E3R4 has a wide range of applications and is suitable for use in a variety of applications. For example, it can be used to regulate voltage and current in power supplies, as a high frequency switch for motor control, in automotive and consumer electronics, and for de-magnetization of magnetic components. Additionally, the device can also be used for temperature sensing, due to its low threshold voltage.

The BUK6E3R4 is a versatile device and has a number of applications and features. Its low on-state resistance, fast switching times, and selectable lock make it ideal for use in power supply applications, motor control, and automotive and consumer electronics. It also has protection against short-circuits and reverse current, which makes it suitable for de-magnetization of magnetic components and temperature sensing.

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