BUK6Y25-40PX Allicdata Electronics

BUK6Y25-40PX Discrete Semiconductor Products

Allicdata Part #:

1727-7658-2-ND

Manufacturer Part#:

BUK6Y25-40PX

Price: $ 0.32
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: BUK6Y25-40P/SOT669/LFPAK
More Detail: P-Channel 40V 38A (Ta) 66W (Ta) Surface Mount LFPA...
DataSheet: BUK6Y25-40PX datasheetBUK6Y25-40PX Datasheet/PDF
Quantity: 1000
1500 +: $ 0.28256
Stock 1000Can Ship Immediately
$ 0.32
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 66W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1591pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BUK6Y25-40PX is a type of single MOSFETs (Metal Oxide Semiconductor Field Effect Transistor). These transistors are used to regulate the flow of electric current on low power control circuits. MOSFETs are especially suited to applications where input signals will vary over a wide range, voltage and current spikes, and high power loads. As MOSFETs can maintain it\'s on-state over a wide range of input voltages, they are often used in many power supply circuits.

In comparison to other types of transistors, like bipolar junction transistors (BJTs) and junction field-effect transistors (JFETs), MOSFETs offer the advantage of lower voltage drain and higher current capacity. This makes them ideal for switching low voltage sources and controlling the current with reduced power dissipation. BUK6Y25-40PX is a type of enhanced mode MOSFET which offers a higher current handling capacity compared to other transistors.

The BUK6Y25-40PX consists of a metal oxide gate which forms a semiconductor junction known as a Schottky Barrier. This barrier enables the transistor’s gate to be controlled by an applied voltage. As the voltage on the gate is increased, the current flow through the transistor decreases and is eventually blocked altogether. This makes the MOSFET ideal for use as a switch in a power supply system.

The gate voltage on the BUK6Y25-40PX can range from 0 to 6V but must not exceed 6V for the device to operate correctly. Characteristics of the BUK6Y25-40PX include maximum drain current of 40A and typical gate threshold voltage of 4.5V. When a 6V gate voltage is applied, the drain voltage reaches zero, meaning that the device is fully on. Fully on implies the device is capable of conducting 40A at the specified performance level.

In applications requiring a continuously variable output, a resistor is usually added between the gate and source. This allows the user to adjust the output voltage in order to control the current flow through the transistor. BUK6Y25-40PX is suitable for a variety of circuits and offers high performance in areas such as power conversion, motor control and industrial automation.

BUK6Y25-40PX is a reliable semiconductor device and can be used in circuits operating in temperatures from -55°C to 125°C. It is important to note that the device is fragile and can easily be damaged if exposed to high voltages or high currents. Its compact size makes it suitable for space constrained applications and allows for easy installation and removal.

In conclusion, the BUK6Y25-40PX is a single MOSFET that offers a low voltage drain and higher current capacity. It is very reliable and is suitable for circuits requiring a wide range of input voltages and current spikes. It is an ideal choice for space constrained applications, providing high performance and long life. The device offers convenient installation and removal and is used in many power supply circuits.

The specific data is subject to PDF, and the above content is for reference

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