BUK664R6-40C,118

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BUK664R6-40C,118 is a type of field-effect transistor (FET) which is also known as a metal oxide semiconductor FET (MOSFET). It is a single-gate transistor designed for use as a high-voltage power switch in a wide range of applications. It is a widely used type of FET in the electronics industry because of its high voltage and current ratings, low on-state resistance, fast switching, and low thermal resistance. This article will discuss the application field and working principle of the BUK664R6-40C,118.

Application Field

The BUK664R6-40C,118 is a high voltage, fast switching MOSFET. It is suitable for use in a variety of applications, including power transfer, load switch logic, load switch circuits, and high frequency switching applications. It is especially suitable for use in automotive applications, as it can handle very large in-car voltages. It is also suitable for use in TV receivers and for powering DC-DC converters, as well as for controlling electromagnetic coils. Additionally, the BUK664R6-40C,118 can be used as a rectifier in motor drives, inverters, and other power applications.

Working Principle

The working principle of the BUK664R6-40C,118 involves two operations. First, the presence of an electric field causes a change in the potential at the gate of the FET, which in turn affects the flow of charge carriers within the channel between the source and the drain. This is referred to as the capacitance effect. Second, the gate voltage alters the current in the channel, thus allowing or blocking the flow of current. This is referred to as the field effect.

In operation, the BUK664R6-40C,118 is controlled by the gate voltage. When a positive voltage is applied to the gate, the FET is turned on and current flows from the source to the drain. When a negative voltage is applied to the gate, the FET is turned off and no current flows through the channel. The voltage applied to the gate must be between a certain range to turn the FET on or off, otherwise no change will occur.

Additionally, the BUK664R6-40C,118 has a breakdown voltage, also known as the avalanche voltage, which is the maximum voltage at which the FET can operate without being damaged. This voltage is higher for the BUK664R6-40C,118 compared to other types of FETs, making it suitable for high-voltage applications.

This article has discussed the application field and working principle of the BUK664R6-40C,118, a high-voltage MOSFET. It is a single-gate transistor designed for use as a high-voltage power switch in a wide range of applications. It is especially suitable for use in in-car applications, TV receivers, DC-DC converters, and electromagnetic coils. Additionally, its high breakdown voltage makes it suitable for use in high-voltage applications.

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