BUK661R9-40C,118 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-5518-2-ND |
Manufacturer Part#: |
BUK661R9-40C,118 |
Price: | $ 0.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 40V 120A D2PAK |
More Detail: | N-Channel 40V 120A (Tc) 306W (Tc) Surface Mount D2... |
DataSheet: | BUK661R9-40C,118 Datasheet/PDF |
Quantity: | 4000 |
800 +: | $ 0.86449 |
Vgs(th) (Max) @ Id: | 2.8V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 306W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 15100pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 1.9 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BUK661R9-40C,118 application field and working principle
BUK661R9-40C,118 is a single field-effect transistor (FET) that is used in various types of electronic equipment. The FET is a three-terminal device with a capacitance between the source and the gate, and resistance between the source and the drain. It offers excellent electrical performance and reliability, and is suitable for a wide range of applications.
The most common applications of FETs are in low-power digital, analog and power circuits, where the device can be used to control current flow through a circuit. Typical applications include switching and amplifier circuits, as well as switching power supply circuits. FETs can be used to replace vacuum tubes and other costly components in audio and video equipment, as well as radios and television sets.
The BUK661R9-40C,118 has an Air Gap structure that allows it to operate from -40°C to 125°C. This makes it suitable for use in high-stress environments, such as in automotive applications. The FET is also hermetic, providing the highest level of reliability in environmental conditions.
The working principle of the BUK661R9-40C,118 is quite simple. The three terminals of the FET—gate, source and drain—are connected to an electrical circuit. When the gate voltage is applied, electrons in the device\'s channel are repelled, creating a conductive path that allows current to flow through the device. The current flow is controlled by the applied gate voltage, which can be either a positive or a negative voltage.
The FET is an attractive device because of its low power consumption and small size. It is a low-power, low-cost alternative to conventional transistors, providing the same high performance in many applications. It is also a reliable solution for many power applications, such as switching and amplifier circuits.
The BUK661R9-40C,118 is a versatile and reliable solution for many electronics applications. With its excellent electrical performance and hermetic package, it is suitable for a wide range of applications. This makes it an attractive option for many designers and engineers who require reliable and high-performance FETs.
The specific data is subject to PDF, and the above content is for reference
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