BUK7504-40A,127 Allicdata Electronics
Allicdata Part #:

568-9805-5-ND

Manufacturer Part#:

BUK7504-40A,127

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH 40V 75A TO220AB
More Detail: N-Channel 40V 75A (Tc) 300W (Tc) Through Hole TO-2...
DataSheet: BUK7504-40A,127 datasheetBUK7504-40A,127 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5730pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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BUK7504-40A,127 Application Field and Working Principle

The BUK7504-40A,127 is an enhancement mode MOSFET developed by Infineon, one of the largest semiconductor manufacturers in the world. It belongs to a family of high power MOSFETs, which consists of high performance, high-voltage in low-voltage systems. The device is extremely versatile, with a number of applications in automotive, consumer, industrial and military applications.

The BUK7504-40A,127 is a N-Channel MOSFET, which means that it uses two terminals (source and drain) to control the current flow from source to drain. In the on-state, the positive voltage applied to the gate terminal will induce a channel between the source and the drain. This channel allows the current to flow from source to drain, thus controlling the voltage and current between those two points. When the gate voltage is reversed, the channel is closed and the device becomes off.

The BUK7504-40A,127 is designed to handle high voltage (40V drain-source voltage) and high current (7A of continuous drain current). The field-effect transistor also boasts low input capacitance and low on-resistance. This makes the device suitable for use in a variety of rectification and power management applications. The device also has a higher thermal resistance, making it suitable for applications requiring high temperature, such as automotive and industrial applications.

Furthermore, the BUK7504-40A,127 has a number of features that can be taken advantage of in various applications. The device is designed to have excellent temperature stability, a wide range of operating temperatures and low SSon (static saturation) characteristics. It also features a low drain-source leakage current, making it an ideal choice for low-power and high-efficiency circuits. This, coupled with Infineon’s excellent design techniques and process technologies, make the BUK7504-40A,127 an excellent choice for power MOSFET applications.

In conclusion, the BUK7504-40A,127 is an excellent choice for users looking for a high-performance, high-voltage MOSFET for a variety of rectification and power management applications. With its low on-resistance, low input capacitance and high temperature stability, the device can be used in a wide range of applications including automotive, consumer, industrial, military and other power management solutions. It is no wonder why the BUK7504-40A,127 has become one of the most popular MOSFETs in the industry.

The specific data is subject to PDF, and the above content is for reference

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