Allicdata Part #: | 1727-4613-2-ND |
Manufacturer Part#: |
BUK9Y12-55B,115 |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 55V 61.8A LFPAK |
More Detail: | N-Channel 55V 61.8A (Tc) 106W (Tc) Surface Mount L... |
DataSheet: | BUK9Y12-55B,115 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.22836 |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 106W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2880pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 61.8A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BUK9Y12-55B,115 is a device used in electronic engineering and found in several common electronic items. Its main application is as a field effect transistor (FET) in high frequency and power management applications. FETs are a type of transistor that, when switched on, will direct the changing electric flow from one point to another point in the circuit.
A FET is composed of a source and a drain, two regions of semiconductor material that are separated by a thin layer of insulation. This insulation is called the gate, and it is here that the FETs effect begins. When voltage is applied to the gate, it forms a channel between the source and drain, allowing current to flow between them. In this way, the FET can be used to control the current flow between two points in a circuit.
The BUK9Y12-55B,115 is a single FET and is used primarily in high frequency, high voltage and power management applications. Its main application is in power supplies where it can control the voltage between the input and output and direct the current in the right direction. It is also used in RF amplifiers and RF signal switches as its high speed transfer rate is suitable for processing complex high frequency signals.
The BUK9Y12-55B,115 is also used in logic circuits as it can drive high power loads. This is because its internal construction is designed to facilitate the safe and efficient flow of electrons. The FET will suppress high voltage spikes that would otherwise cause damage to the circuit and it is also a good choice for generating PWM (pulse width modulated) signals.
The BUK9Y12-55B,115 is a low power FET, designed for use in small scale applications. Its low voltage rating makes it suitable for applications in portable electronics such as cellular phones and PDAs. Its small size also makes it ideal for incorporation into portable devices as it can be bundled with many small components to save space, reduce power consumption and increase efficiency.
The BUK9Y12-55B,115 is a FET that can be used in a wide range of applications, due to its versatility and robust performance. Its use in high frequency and power management circuits allows designers to increase efficiency, while its low power rating makes it suitable for use in low power portable devices. Its small size also makes it a good choice for use in small scale electronic projects.
The specific data is subject to PDF, and the above content is for reference
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