BUK9629-100B,118

Vgs(th) (Max) @ Id:	2V @ 1mA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	157W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4360pF @ 25V
Vgs (Max):	±15V
Gate Charge (Qg) (Max) @ Vgs:	33nC @ 5V
Series:	Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs:	27 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	46A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

BUK9629-100B is a device type that falls into the category of transistors and is further classified as FETs (Field-Effect Transistors) and MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors). Specifically, it is a single MOSFET that is used for a variety of applications, and this article will explain the principle and the applications that this device may be used for.

Working Principle

A MOSFET is a four terminal device, with the source, gate, and drain terminals (plus a fourth terminal, which is the substrate). When a potential difference between the gate and source terminals is applied, it causes an electric field to form inside the channel. This electric field then causes the electrons in the channel to move either from the source to the drain (if the field is moderate) or from the source to the gate (if the field is very large). This basic principle of operation is known as the field effect.The gate voltage controls the width of the conducting channel and thus the current flow through it. A larger gate voltage will create a wider channel, while a smaller gate voltage will produce a narrower channel. In addition to controlling the current, the gate voltage also determines the voltage drop across the MOSFET. When the source voltage is higher than the gate voltage, the electrons will gather around the gate, forming an inversion layer. The inversion layer further enhances the ability of the MOSFET to control the current flow.

Features

The BUK9629-100B comes with some important features that make it well suited for a variety of applications. Firstly, it has a breakdown voltage of 100V, which allows it to switch larger voltages with ease. Secondly, it has a drain-source on-resistance of 0.5ohms and a continuous drain current of 39A. Thirdly, it has a maximum drain-source voltage of 100V and can handle a maximum gate-source voltage of 25V. Finally, it has a maximum operating temperature of 150°C and a thermal resistance of more than 5°C/W.

Applications

The BUK9629-100B is suitable for a variety of applications and can be used as a switch, a voltage regulator, and a current limiter. As a switch, it can be used to control high power devices such as motors, relays, and solenoids. As a voltage regulator, it can be used to maintain a constant voltage even when the load varies. Finally, it can be used as a current limiter to protect sensitive components from overcurrent damage.In addition to these applications, the BUK9629-100B is also suitable for use in high frequency switching circuits. It is ideal for use in automotive electronics, industrial power supplies, and consumer electronics.

Conclusion

In conclusion, the BUK9629-100B is a single MOSFET with a variety of features, making it suitable for a wide range of applications. It has a breakdown voltage of 100V, an on-resistance of 0.5 Ohms, a maximum drain-source voltage, and a maximum operating temperature of 150°C. The BUK9629-100B is suitable for use as a switch, a voltage regulator, a current limiter, and for high frequency switching circuits.

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