Allicdata Part #: | 1727-7136-2-ND |
Manufacturer Part#: |
BUK962R5-60E,118 |
Price: | $ 1.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V 120A D2PAK |
More Detail: | N-Channel 60V 120A (Tc) 357W (Tc) Surface Mount D2... |
DataSheet: | BUK962R5-60E,118 Datasheet/PDF |
Quantity: | 5600 |
800 +: | $ 1.01307 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 357W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 17450pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 25A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BUK962R5-60E,118 is a type of transistor, classified as a Field Effect Transistor, or FET, and a Metal Oxide Semiconductor FET, or MOSFET, and is a type of single FET.
FETs are electronic components that can be used in various electronic applications, primarily to control the flow of current in an electrical circuit. FETs consist of three main parts: a source, a drain, and a gate. The source and drain are both connected to a semiconductor material, usually silicon. The gate acts as the third “electrode”, and it is connected to the source and drain by an insulator material. The gate is the only part of the FET that is electrically active.
A MOSFET is a type of FET that uses a metal-oxide semiconductor as the insulating material between the source, drain and gate. Unlike most other types of FETs, MOSFETs are relatively insensitive to temperatures and don’t require much power to operate. This makes MOSFETs ideal for low-power applications, such as switching circuits and digital circuits.
The BUK962R5-60E,118 is a single-FET, meaning it only has one source and the gate. This type of FET can be used in circuits with a high frequency, as the single-FET has the advantage of greater speed. In addition, the single-FET can be used in applications where a small, lightweight component is needed.
The BUK962R5-60E,118 can be used in a variety of electronic applications, including power management for industrial and consumer products, power supply regulation, audio and radio frequency control and amplification, and robotics. This type of MOSFET can also be used in amplifiers and audio circuits, as it provides an increase in power output without a significant increase in power consumption.
The working principle of the BUK962R5-60E,118 is based on the fact that when a positive voltage is applied to the gate of the FET, a current will flow from the source to the drain. This current is then regulated by the voltage applied to the gate and the resistance between the source and drain. By varying the gate voltage, the resistance between the source and drain can be adjusted, allowing the current to be increased or decreased.
In summary, the BUK962R5-60E,118 is a type of Field Effect Transistor that is classified as a single Metal Oxide Semiconductor FET. It is specifically designed for high-frequency applications or applications where a small, lightweight component is needed. The BUK962R5-60E,118 can be used in power management, audio and radio frequency control, and robotics applications. The working principle of this type of MOSFET involves using a positive voltage applied to the gate to regulate a current from the source to the drain by varying the gate voltage.
The specific data is subject to PDF, and the above content is for reference
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