BUK9615-100A,118 Discrete Semiconductor Products

Transistors - FETs, MOSFETs - Single

BUK9615-100A,118 is a single N-Channel Enhancement Mode MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device. It is designed for high-speed switching applications, especially in Pulse Width Modulated (PWM) systems working in 300 to 1000Vdc.

Application Field

The MOSFET is suitable for power systems like motor control, robotic control, induction heating and converter applications where high efficiency and fast switching speed is required. It is designed for general purpose switching norms, low losses, fast switching and high blocking voltage capability.

Working Principle

A MOSFET is a voltage-controlled field-effect transistor, hence it works based on the relationship between applied voltage and charges, which helps to control current flow. The BUK9615-100A includes a thick N-Channel MOSFET structure, representing a vertical symmetric structure where the gate and drain current are linearly related. Unlike BJT (Bipolar Junction Transistor) technology, the MOSFET does not depend on the thermal current generated like BJTs, acting as a switch or rectifier. It has a low on-resistance and logic-level gate compatible. The switching speed with this device is very fast and it can easily handle the high power, needed for many applications.

The BUK9615-100A includes a thick N-Channel MOSFET structure, so the voltage impressed on the gate has the ability to control the flow of current to the drain and source. The crucial parameter that brings this control is the width of the N-Channel, which is considered to be the width of the channel, that is formed in the substrate due to the combination of the N-type dopant and silicon dioxide (SiO2). The proper width of the N-Channel will depend on the bias voltage of the gate and the operating temperature of the device.

The addition of a small gate voltage (VGS) will induce a depletion region at the interface between N-Doped silicon and the SiO2. This region is known as the depletion region which will gradually adjust its width for different voltages depending upon the positive or negative influence of the gate voltage. An increase of the gate voltage would eventually reduce mobile hole carriers in the N-channel at the drain region, so the device begins to limit current between source and drain. So, higher gate voltage will reduce the current in between the source and the drain, enabling the gate to be used as a sort of switch.

The MOSFET is also useful in PWM applications because it is capable of switching with incredibly rapid response time. The BUK9615-100A device will be able to give peak turn-on/off times reliably to help in achieving switching frequencies of multiple kHz. This rate can even be higher using other compatible devices. Moreover, this MOSFET has a very low on-resistance, so it is capable of supplying high power with lower heat dissipation. Therefore, BUK9615-100A is ideally suited for high-frequency and high-voltage switching operations.