BUK965R4-40E,118 Allicdata Electronics
Allicdata Part #:

1727-7262-2-ND

Manufacturer Part#:

BUK965R4-40E,118

Price: $ 0.53
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 40V 75A D2PAK
More Detail: N-Channel 40V 75A (Tc) 137W (Tc) Surface Mount D2P...
DataSheet: BUK965R4-40E,118 datasheetBUK965R4-40E,118 Datasheet/PDF
Quantity: 1600
800 +: $ 0.47181
Stock 1600Can Ship Immediately
$ 0.53
Specifications
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 137W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4483pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 33.9nC @ 5V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BUK965R4-40E,118 is classified as a single, type of FETs (Field Effect Transistor), MOSFETs (Metal Oxide Semiconductor Field Effect Transistor). A Field Effect Transistor is a type of transistor that utilizes an electric field for controlling current within a semiconductor, unlike the traditional Bipolar Junction Transistor that utilizes base and collector currents flow. A MOSFET is a type of Field Effect Transistor that is composed of a two-gate structure, the gate and the drain. In the BUK965R4-40E,118, the gate is composed of source, drain, and gate capacitors, while the drain is composed of drain and gate resistors.

The BUK965R4-40E,118 works off of a principle similar to that of a FET, which is that a voltage applied at the gate terminal produces an electric field which modulates the drain current in proportion to the magnitude of the gate voltage. This allows the FET to function as a switch, and in the case of the BUK965R4-40E,118, it is used to control the flow of current between the source and the drain terminals. As the gate voltage is increased, the resistance between the source and the drain is increased, causing the current to be reduced or shut off completely and allowing for the controlled flow of current through the device.

The BUK965R4-40E,118 is used in numerous electronic applications, including digital logic circuits, analog amplifiers, switching circuits, power converters, and radio frequency amplifiers. It is also used for voltage controlled analog amplifiers, low noise amplifiers, current sensing circuits, and temperature controlled heaters. The BUK965R4-40E,118 is an extremely versatile component, and can be used in a variety of different applications. For example, in switching applications, it can be used to control the flow of current through transistors, while in analog applications, it can be used to control the gain of an amplifier.

The BUK965R4-40E,118 is commonly used in the automotive industry, as it offers a low power consumption, high power efficiency, and a wide operating temperature range. Its wide operating temperature range makes it suitable for use in applications with extreme temperature variation. Additionally, its ability to withstand high voltages makes it suitable for use in high frequency electronics. The BUK965R4-40E,118 is also used in industrial applications, such as process control and industrial automation.

In conclusion, the BUK965R4-40E,118 is a single, type of FETs (Field Effect Transistors), MOSFETs (Metal Oxide Semiconductor Field Effect Transistor). It is capable of controlling current flow between the source and the drain terminals and is used for numerous applications in the automotive, industrial, digital logic and analog amplifier industry. It is a vital component to many electrical and electronic systems, as it offers low power consumption, high power efficiency, and a wide operating temperature range.

The specific data is subject to PDF, and the above content is for reference

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