| Allicdata Part #: | 1727-1121-2-ND |
| Manufacturer Part#: |
BUK9Y12-100E,115 |
| Price: | $ 0.47 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 100V LFPAK |
| More Detail: | N-Channel 100V 85A (Tc) 238W (Tc) Surface Mount LF... |
| DataSheet: | BUK9Y12-100E,115 Datasheet/PDF |
| Quantity: | 1000 |
| 1500 +: | $ 0.42475 |
| Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
| Package / Case: | SC-100, SOT-669, 4-LFPAK |
| Supplier Device Package: | LFPAK56, Power-SO8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 238W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7973pF @ 25V |
| Vgs (Max): | ±10V |
| Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 5V |
| Series: | Automotive, AEC-Q101 |
| Rds On (Max) @ Id, Vgs: | 12 mOhm @ 25A, 5V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Current - Continuous Drain (Id) @ 25°C: | 85A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The BUK9Y12-100E,115 is a N-channel MOSFET, meaning it utilizes a metal oxide (MOS) semiconductor acting as a Field Effect Transistor (FET) to control current through it dependent on the voltage applied to its gates. The device is a single MOSFET dip switchable transistor with low ON resistance, meaning it can operate with a large current and low dropout voltage. It is widely used in systems such as industrial robots, medical equipment and electric vehicles, due to its high-speed switching capability, low voltage operation, and small package size.
MOSFETs are used in many different applications and act on the principle of allowing electrons to flow through the channel in the MOSFET to the source gate. The source gate acts as a gate valve which is opened or closed by applying a potential difference to the gate. When the potential difference applied to the gate is positive, it creates a depletion region which prevents electrons from flowing and the current is blocked. Conversely, when the potential difference applied to the gate is negative, no depletion region is formed and so electrons are able to flow freely to the source.
The BUK9Y12-100E,115 MOSFET is ideal for use in a variety of applications due to its low-voltage operation, switching speed, and size. It is useful in switching systems such as contactors, microcontrollers, and relays, as it can quickly and reliably switch from one state to another. In these types of systems, the MOSFET can act as a semi-conductor switch, allowing for the flow of electricity to be interrupted or restored. The device is also suitable for use in sensitive circuits and systems, due to its low drive voltage and low dissipation loss.
In addition to its low voltage operation, the BUK9Y12-100E,115 can also operate with a high current rating, making it an ideal choice for power management applications. This device has a breakdown voltage of 100V, which is enough to handle high current applications, making it ideal for use in power converters, motor control and other automotive applications. The device is also useful in solar energy systems and battery management, where it can provide efficient and reliable current control.
Overall, the BUK9Y12-100E,115 MOSFET is a very useful device with a wide range of applications. Its low voltage operation and switching speed make it ideal for high static current switching, while its breakdown voltage allows it to handle high current applications. The device is also suitable for use in sensitive circuits and systems, due to its low drive voltage and low dissipating loss. As such, it can be used to ensure efficient power management and reliable current control in a variety of applications ranging from industrial robots to solar energy systems.
The specific data is subject to PDF, and the above content is for reference
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BUK9Y12-100E,115 Datasheet/PDF