BUK964R2-80E,118 Allicdata Electronics
Allicdata Part #:

1727-1896-2-ND

Manufacturer Part#:

BUK964R2-80E,118

Price: $ 1.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 80V 120A D2PAK
More Detail: N-Channel 80V 120A (Tc) 349W (Tc) Surface Mount D2...
DataSheet: BUK964R2-80E,118 datasheetBUK964R2-80E,118 Datasheet/PDF
Quantity: 1000
800 +: $ 1.01307
Stock 1000Can Ship Immediately
$ 1.11
Specifications
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 349W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 17130pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 5V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Transistors - FETs, MOSFETs - Single

BUK964R2-80E,118 is a single-pack type of FETs, Mosfet with the model number BUK964R2-80E. It belongs to the BUK 964 Class of single-pack FETs, Mosfets and has a variety of applications across industries. It has a maximum drain source voltage of 30V and a power dissipation of 7.5W, which makes it suitable for a variety of projects in commercial and industrial applications.

The BUK964R2-80E,118 has a drain source on resistance of 40 mOhm and a drain current of 8 A, allowing it to be used in a variety of projects which require high current flow. It also has a maximum drain source voltage of 30V, making it suitable for use in projects where higher voltages are necessary. Furthermore, it has an on resistance of just 40 mOhm, allowing for low-loss power transfer and reduced power consumption.

The BUK964R2-80E,118 works on the principle of an insulated gate field effect transistor. A gate voltage is applied to turn the transistor on and off, depending on the voltage level of the gate signal. When a signal is applied to the gate, an electric field is created between the source and the drain, allowing current to flow from the source to the drain. This type of transistor is ideal for a variety of applications as it allows for current to be transferred quickly and efficiently over long distances.

The BUK964R2-80E,118 is mainly used in high-current applications such as motor controller, power supply and system control applications in industrial and commercial settings. It is also suitable for audio power amplifiers and audio signal processors. Additionally, it can also be used in LED LED lighting systems and solar panels for controlling current flow. It can also be used in high-frequency transistors for measuring and controlling voltage, current, and power signals.

Overall, the BUK964R2-80E,118 is an excellent choice for a variety of applications across industries. Its high current capacity, high voltage capability, low on resistance and cost-effective price point make it suitable for a wide variety of projects. Furthermore, its reliable performance and efficient power transfer make it one of the most popular choices for FETs, Mosfet applications.

The BUK964R2-80E,118 is a single-pack type of FETs, Mosfet, meaning it can be soldered onto circuit boards for easy installation and maintenance. It is also small and relatively inexpensive, making it a great choice for the DIY maker and enthusiast. Furthermore, its ability to be soldered onto a circuit board allows for a wide range of applications, from large industrial projects to smaller hobby projects.

The specific data is subject to PDF, and the above content is for reference

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