BUK9Y113-100E,115 Allicdata Electronics

BUK9Y113-100E,115 Discrete Semiconductor Products

Allicdata Part #:

1727-1854-2-ND

Manufacturer Part#:

BUK9Y113-100E,115

Price: $ 0.19
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 100V LFPAK
More Detail: N-Channel 100V 12A (Tc) 45W (Tc) Surface Mount LFP...
DataSheet: BUK9Y113-100E,115 datasheetBUK9Y113-100E,115 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.16762
Stock 1000Can Ship Immediately
$ 0.19
Specifications
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 110 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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A BUK9Y113-100E,115 is an n-channel Field Effect Transistor (FET) manufactured by NXP Semiconductors.

In this article, we discuss the functionality and applications of the BUK9Y113-100E,115. We will first provide an introduction to FETs and then discuss the basic working principle of the BUK9Y113-100E,115.

Introduction to FETs

A FET, short for field effect transistor, is a type of transistor that utilizes electric fields to control its current. FETs allow for efficient and reliable control of electric current with a small amount of voltage. This makes them ideal for use in digital and analog circuits. FETs are also typically low power and small in size, making them a popular choice for smartphones, tablets, and other electronic devices.

FETs are available in two main types: N-channel and P-channel. N-channel FETs are the most commonly used type and are the type used in the BUK9Y113-100E,115. In an N-channel FET, the current flows freely in the “on” state, while the current is blocked in the “off” state. P-channel FETs, on the other hand, work in reverse.

BUK9Y113-100E,115 Working Principle

The BUK9Y113-100E,115 is an n-channel FET with a drain-source voltage rating of 100V. It is capable of handling up to 55A of continuous drain current. The FET has a low on-resistance of 0.00284 Ohms and a fast switching speed of 22ns. This makes it a great choice for applications that require high-speed switching and low on-resistance.

The BUK9Y113-100E,115 has an analog control voltage rating of -6V to +6V. By applying a low voltage to the Gate pin, the FET can be turned on and current will flow freely through the Drain-Source path. A higher voltage on the Gate pin will turn off the FET and block the current flow. This behavior makes the BUK9Y113-100E,115 well suited for use in analog circuits and motor control applications.

Application Fields

The BUK9Y113-100E,115 is a versatile FET that can be used in a variety of applications. Its high current and voltage ratings make it suitable for use in power switched circuits and power conversion circuits. Its low on-state resistance makes it ideal for use in switching and motor control applications. The fast switching speed makes it suitable for use in high-speed applications such as video and audio. Additionally, the BUK9Y113-100E,115 can be used in analog circuits, such as amplifiers, filters, and oscillators.

Conclusion

The BUK9Y113-100E,115 is an n-channel FET with many desirable characteristics. Its low on-state resistance, high current and voltage ratings, and fast switching speed make it suitable for use in a variety of applications, including power switching, motor control, and analog circuits. We hope this article has helped you understand the functionality and applications of the BUK9Y113-100E,115.

The specific data is subject to PDF, and the above content is for reference

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