DMN601WKQ-7 Allicdata Electronics
Allicdata Part #:

DMN601WKQ-7DITR-ND

Manufacturer Part#:

DMN601WKQ-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 300MA SOT323
More Detail: N-Channel 60V 300mA (Ta) 200mW (Ta) Surface Mount ...
DataSheet: DMN601WKQ-7 datasheetDMN601WKQ-7 Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Power Dissipation (Max): 200mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DMN601WKQ-7 is typically used in areas of the industry where it can provide a huge amount of power and precise control at high frequencies. It is a single, depletion-mode N-channel MOSFET that is specially designed for use in high power switching systems. The structure of the DMN601WKQ-7 consists of a single N-channel MOSFET with a depletion-mode gate facilitating very low on-resistance and high peak blocking voltage. The primary benefit of this device is that it provides very efficient power handling, very fast switching speed, and precise control of power in high-frequency applications. Unfortunately, this type of MOSFET is not suitable for use in high voltage applications due to its limited breakdown voltage.

The working principle behind the DMN601WKQ-7 is based on the charge-carrier transport control capability of the depletion-mode gate. When the voltage applied to the gate of the MOSFET is below the threshold voltage, no depletion or inversion regions are formed under the gate. This causes the device to behave like an open switch and no current flows between the source and drain. When the voltage applied to the gate exceeds the threshold voltage, a depletion or inversion region forms and the MOSFET can no longer act as an open switch and current starts flowing between the source and drain. The magnitude of this current is proportional to the voltage applied to the gate, so precise control of power can be achieved by controlling the gate voltage. In addition, this feature also enables the device to operate in a fast switching mode with very low on-resistance.

The DMN601WKQ-7 is designed for applications that require high-power and fast switching speeds, such as in switched-mode power supplies, motor drive circuits, DC-DC and AC-DC converters, and cathodic protection systems. In particular, the device is commonly used in high-frequency applications, such as in DC-DC converters and antenna switching systems.

Due to its low on-resistance, fast switching speed, and precise control of power, the DMN601WKQ-7 is an ideal choice for a wide range of high-power and high-frequency applications. The device is not suitable for use in high voltage applications due to its limited breakdown voltage, but it does provide efficient power handling and precise control of power making it an excellent choice for high-frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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