Allicdata Part #: | DMN6066SSS-13TR-ND |
Manufacturer Part#: |
DMN6066SSS-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 3.7A 8SO |
More Detail: | N-Channel 60V 3.7A (Ta) 1.56W (Ta) Surface Mount 8... |
DataSheet: | DMN6066SSS-13 Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.56W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 502pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 66 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.7A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMN6066SSS-13 is a type of single Junction Field-Effect Transistor (JFET), designed for use in low-frequency, low-noise applications. It is commonly used in high v-switching circuits and as a low-bias, high input impedance amplifier in circuits such as amplifiers, preamplifiers, filters, and logarithmic amplifiers.
DMN6066SSS-13 is a P-channel junction field-effect transistor (JFET) with a maximum source-drain voltage of 60V and drain currents up to 1A. It features good noise performance, low distortion, and low on-resistance. This makes it suitable for use in both low-frequency and high-frequency applications. It also requires minimal gate current, making it ideal for low-power applications.
The working principle of DMN6066SSS-13 JFET involves gate biasing. Gate biasing is a type of circuit that is used to determine and control the gate voltage. In the case of the DMN6066SSS-13, the gate voltage is determined by either a freely floating gate or by a gate resistor connected to either the source or drain. When the gate voltage is high, the JFET’s gate current increases, lowering its resistance and allowing more current to flow through the junction. Conversely, when the gate voltage is low, the JFET’s gate current decreases and the resistance increases, reducing the amount of current that can flow through the junction.
DMN6066SSS-13 is highly suitable for a wide range of applications. It is an ideal choice for low-frequency, low-noise amplifier circuits, particularly in amplifier, preamplifier, filter, and logarithmic amplifier circuits. The high input impedance of the JFET makes it an excellent choice for use in Automatic Gain Control (AGC) circuits. It can also be used for high-voltage switching and as a current limiting element in power circuits. Furthermore, the low on-resistance and low gate current of the DMN6066SSS-13 make it an excellent option for low-power applications, including battery operated circuits.
In conclusion, the DMN6066SSS-13 is an excellent choice for a range of applications, including low-frequency, low-noise amplifier circuits, AGC circuits, and high-voltage switching circuits. Its low on-resistance and low gate current make it especially suitable for low-power applications. DMN6066SSS-13 is an ideal option for a wide range of applications, including amplifiers, preamplifiers, filters, logarithmic amplifiers, and power circuits.
The specific data is subject to PDF, and the above content is for reference
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