DMN6068LK3Q-13

Series:	*
Packaging:	Tape & Reel (TR)
Part Status:	Active

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DMN6068LK3Q-13 is a type of high voltage N-Channel field effect transistor (NFET). This device is a Semiconductor-contacted integrated power transistor, which is a semiconductor device used in a wide range of electronic circuits and applications. The device has a low drain-source on-state resistance (RDS(on)), an extremely low gate-drain capacitance, and an ultrahigh avalanche energy rating, which make it ideal for applications where low on-state resistance, high switching speed and high reliability are required. The DMN6068LK3Q-13 is mainly used in power switching and power switching drivers. It is suitable for various industrial applications, such as AC/DC power supplies, Voltage Regulators, Switching Frequency Converters, and Inverters for UPSs, Battery Chargers and so on. It is also used in automotive and automotive electronic products, such as electric vehicles and hybrid electric vehicles. The DMN6068LK3Q-13 device is based on N-channel enhancement-mode vertical DMOS technology, which relies on the vertical flow of drain-source current. It consists of source and drain terminals, gate and backgate contacts, and a control gate electrode. The device has an on-resistance of 60mΩ representing a low power loss in high power circuits, with a maximum reverse leakage of 1.5 µA.The DMN6068LK3Q-13 uses an N-channel design, which results in a lower gate-source voltage (Vgs) and therefore lower switching losses. It also has an adjustable body drain voltage in order to optimize power losses and to reduce the impact of the body to source capacitance.The working principle of the DMN6068LK3Q-13 is based on the physics of field effect transistors. When a voltage is applied between the gate and the source, a field effect is created. This field effect will alter the current flow between the source and the drain. In an N-channel transistor, when the gate-source voltage is positive, the conductivity between the source and the drain is increased. The drain current is a function of the magnitude of the gate-source voltage. The DMN6068LK3Q-13 device can operate at frequencies up to 200 kHz, and its maximum drain current is typically 4.1 A. It is an ideal choice for applications that require a fast switching speed, low on-resistance, and high reliability. It can be used in many power switching applications such as AC/DC power supplies, voltage regulators, switching frequency converters, and inverters for UPS systems, and battery chargers. In summary, the DMN6068LK3Q-13 is a high voltage N-channel field effect transistor (NFET) with low drain-source on-state resistance (RDS(on)), an extremely low gate-drain capacitance, and an ultrahigh avalanche energy rating, which make it ideal for applications where low on-state resistance, high switching speed and high reliability are required. It is suitable for various industrial applications, such as AC/DC power supplies, Voltage Regulators, Switching Frequency Converters, and Inverters for UPSs, Battery Chargers and so on. It is also used in automotive and automotive electronics, such as electric vehicles and hybrid electric vehicles. The device is based on N-channel enhancement-mode vertical DMOS technology, which relies on the vertical flow of drain-source current. It can operate at frequencies up to 200 kHz, and its maximum drain current is typically 4.1 A.

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