DMTH6010SK3-13 Allicdata Electronics
Allicdata Part #:

DMTH6010SK3-13DITR-ND

Manufacturer Part#:

DMTH6010SK3-13

Price: $ 0.36
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 16.3A
More Detail: N-Channel 60V 16.3A (Ta), 70A (Tc) 3.1W (Ta) Surfa...
DataSheet: DMTH6010SK3-13 datasheetDMTH6010SK3-13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.32458
Stock 1000Can Ship Immediately
$ 0.36
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 36.3nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMTH6010SK3-13 is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is designed for use in a variety of applications that require high-speed switching and low on-state resistance.

Application Fields

The DMTH6010SK3-13 is suitable for high current and high frequency applications, such as automotive electronics and power switching. It can also be used in relay drivers and inverters. This MOSFET can be used as a switch or a linear amplifier.

Working Principle

A MOSFET is a type of transistor that uses an electric field to control the current flow. In a MOSFET, current flows through a channel that is sandwiched between two metal oxide layers. The channel is created by applying a voltage to a gate electrode. The voltage applied to the gate modulates the current flow through the channel.

The DMTH6010SK3-13 is a N-channel MOSFET, which means that current flows from the source to the drain when a voltage is applied to the gate. When the voltage is removed, the channel is “turned off” and no current can flow. This makes the DMTH6010SK3-13 ideal for power switching applications.

The DMT6010SK3-13 has a maximum drain-source voltage of 60V, a maximum drain current of 4A, a maximum power dissipation of 4W, and an on-state resistance of 13mΩ. These specifications make it suitable for low power switching applications.

The specific data is subject to PDF, and the above content is for reference

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