DMTH6010SK3-13

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The DMTH6010SK3-13 is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is designed for use in a variety of applications that require high-speed switching and low on-state resistance.

Application Fields

The DMTH6010SK3-13 is suitable for high current and high frequency applications, such as automotive electronics and power switching. It can also be used in relay drivers and inverters. This MOSFET can be used as a switch or a linear amplifier.

Working Principle

A MOSFET is a type of transistor that uses an electric field to control the current flow. In a MOSFET, current flows through a channel that is sandwiched between two metal oxide layers. The channel is created by applying a voltage to a gate electrode. The voltage applied to the gate modulates the current flow through the channel.

The DMTH6010SK3-13 is a N-channel MOSFET, which means that current flows from the source to the drain when a voltage is applied to the gate. When the voltage is removed, the channel is “turned off” and no current can flow. This makes the DMTH6010SK3-13 ideal for power switching applications.

The DMT6010SK3-13 has a maximum drain-source voltage of 60V, a maximum drain current of 4A, a maximum power dissipation of 4W, and an on-state resistance of 13mΩ. These specifications make it suitable for low power switching applications.

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