Allicdata Part #: | FCPF9N60NTYDTU-ND |
Manufacturer Part#: |
FCPF9N60NTYDTU |
Price: | $ 1.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 9A TO220F |
More Detail: | N-Channel 600V 9A (Tc) 29.8W (Tc) Through Hole TO-... |
DataSheet: | FCPF9N60NTYDTU Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 1.58068 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Formed Leads |
Supplier Device Package: | TO-220F-3 (Y-Forming) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 29.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1240pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | SupreMOS™ |
Rds On (Max) @ Id, Vgs: | 385 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FCFP9N60NTYDTU is a 600 Volt N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is specifically designed for high voltage and high current applications, such as motor drives, industrial motor controls and switch mode power supplies. It is capable of withstanding a drain-source voltage of up to 600V, with a drain current of up to 12A.
The most popular applications for N-channel MOSFETs like the FCFP9N60NTYDTU include switching power supplies and drives, instrumentation amplifiers and motor control. It is widely used in industrial settings to control a variety of loads. It can also be used for logic level shift, audio switches, mobile power, and so on.
The FCFP9N60NTYDTU is based on a vertical structure architecture, where the transistor element is positioned in the middle of two metal layers – the drain and the source. This configuration allows for excellent electrical characteristics and improved reliability compared to conventional MOSFETs.
At the heart of the device is the source-drain channel – this is the region that allows current to flow when the MOSFET is in the “on” state. The source and the drain are separated by a thin insulating layer – the oxide layer – which maintains the stability of the voltage along the channel. There is also a gate connected to the oxide layer, which controls the amount of current flowing through the channel.
The FCFP9N60NTYDTU operates on the principle of “field effect”. When a voltage is applied across the gate and the source, the electrons are attracted towards the gate and an electric field is formed between the gate and the channel. This electric field helps in controlling the current flow. When the electric field is increased, the current flow increases and the MOSFET goes into the “on” state. Conversely, when the gate voltage decreases, the current flow decreases, and the MOSFET goes into the “off” state.
The FCFP9N60NTYDTU has a wide operating temperature range from -55°C to 175°C and can handle a maximum drain-source voltage of 600V and a maximum drain current of 12A. It also has an integrated ESD protection (electro-static discharge) that prevents the device from being damaged by high-energy electrics such as lightning.
Overall, the FCFP9N60NTYDTU is a great choice for high current, high voltage applications including motor drives, industrial motor control, and switch mode power supplies.
The specific data is subject to PDF, and the above content is for reference
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