FDD6N50TM-WS

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The FDD6N50TM-WS is a part of the FDD6NxTM-WS series of N-channel enhancement mode insulated gate field-effect transistors from Vishay Intertechnology. This series is a low-cost, fast and low gate-charge MOSFET with excellent switching performance and integrated protection features. This transistor is based on the latest advances in process technology, providing superior conduction and fast switching characteristics. It is optimized for improved performance in applications such as LED backlighting, and LCD, and plasma display panel (PDP) applications.

This FDD6N50TM-WS transistor is among the most cost-effective transistors in the series, offering superior performance in a variety of applications. It has an absolute maximum drain-source voltage (VDS) rating of 500 V, a drain current of 6 A, and a Gate-source voltage (VGS) range from -10 V to +14 V. It has an on-resistance rating (RDS(on)) of 0.094&ohm at 10 V, 0.092&ohm at 6 V, and 0.093&ohm at 4 V. This MOSFET has a package size of TO-220, making it perfect for compact device designs. It also has excellent thermal characteristics with a thermal impedance of 5.8&ohm - 8.4&ohm, and a maximum power dissipation rating of 1 W.

The FDD6N50TM-WS uses an insulated-gate field-effect transistor design to manipulate the flow of electrons. It uses voltage applied to the gate terminal to regulate the conduction between the source and the drain terminals. The greater the voltage applied to the gate, the higher the conductivity between the two terminals. This property of being able to control the current flow by voltage makes it a very reliable and efficient switch.

This MOSFET operates on the principle of field effect or capacitor-like action. When a voltage is applied to the gate, it forms an electric field. This electric field induces charge carriers to move through the channel between the source and the drain. The induced charge carriers can carry current when properly turned on, making it a low-cost and reliable switch. The insulated gate prevents gate current leakage, resulting in greater stability.

The FDD6N50TM-WS transistor is useful for applications such as LED backlighting, LCD, and plasma display panel (PDP) applications. It is also suitable for other electronic circuits that require fast switching performance, low gate charge, and low on-resistance. It can be used in circuits that require high-side drivers, like motor drives, or as high-side switches, like contactors. It is widely used in a variety of power management applications such as DC-DC converters and power converters.

The FDD6N50TM-WS is an excellent choice for a variety of applications due to its superior switching performance and integrated protection features. Its low cost and excellent performance make it a popular choice for designers who need a reliable and cost-effective switch. This large-area MOSFET is an excellent device for applications that require fast switching, low gate charges and low on-resistance.

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