Allicdata Part #: | FDD6690ATR-ND |
Manufacturer Part#: |
FDD6690A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 12A DPAK |
More Detail: | N-Channel 30V 12A (Ta), 46A (Tc) 3.3W (Ta), 56W (T... |
DataSheet: | FDD6690A Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252AA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.3W (Ta), 56W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1230pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta), 46A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FD6690A is a monolithic power field effect transistor (FET). It has been designed for high voltage and current applications including DC-DC converter, battery charger and switch mode power supplies. The device is capable of driving a load of up to 5A at peak current levels. It has excellent thermal and electrical performance characteristics, making it ideal for applications where low power consumption and high efficiency are required.
The FD6690A is an N-channel enhancement type MOSFET with an integral 1500V avalanche protection diac. This protection enables the device to be used in high voltage applications. The device is also highly reliable and provides high efficiency, low power consumption, and low parasitic capacitances. The off-state resistance is also very low and the on-state conductance is very high. The device is available in a number of packages, including D2PAK, SOP-8, DIP-8 and DIP-18. The maximum voltage rating is 1500V, with a maximum continuous drain-source current of 5A and a maximum on-state resistance of 1.6Ω.
The FD6690A is a single, self-protected power MOSFET and has a variety of applications such as DC-DC converters and battery chargers. The device is also used in pressure, temperature and flow sensors and in motor control. The device offers a high degree of protection against electrostatic discharge and can withstand currents up to 5A. The device is also capable of handling high frequency operation and is well suited for high power switching applications.
The working principle of the FD6690A is based on the fact that when a conducting semiconductor material, such as silicon, is placed between two metal plates, an electric field is created. This electric field induces a charge in the semiconductor material which then acts as a switch. This is called the field effect, and it is the basic principle behind the operation of the FD6690A. The electric field generated between the two plates can be adjusted to create an “on” or “off” state, allowing the device to be used to control the flow of current or voltage.
The FD6690A is a very reliable device and has been designed to meet the industrial standards for safety and reliability. It has also been designed to be highly energy efficient and to provide excellent power savings. The device is suitable for a wide range of applications including heavier industrial control and high-voltage systems. It can also be used in a variety of high-frequency switching applications, making it ideal for use in communication, automation and power electronic devices.
The specific data is subject to PDF, and the above content is for reference
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