Allicdata Part #: | FDD6030LTR-ND |
Manufacturer Part#: |
FDD6030L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 12A DPAK |
More Detail: | N-Channel 30V 12A (Ta), 50A (Tc) 3.2W (Ta), 56W (T... |
DataSheet: | FDD6030L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta), 56W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1230pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 14.5 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta), 50A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.FDD6030L application field and working principle
The FDD6030L is one of the most popular field-effect transistor (FET) devices on the market today. It is a single dual-gate mosfet (DG-MOSFET), which means that it has two independent gates, and can be used in a variety of applications.
Applications
The FDD6030L is a versatile device, and is used in a variety of different applications. Its primary use is as a switch, and it is often used in circuit designs requiring a moderate amount of power transfer. It is also used as an amplifier in some circuits, and is capable of amplifying signals up to 600MHz.
In addition to being used as a switch and amplifier, the FDD6030L is also used in RF (radio frequency) applications. It is capable of amplifying signals up to 4GHz, making it one of the best-suited fets for RF applications. It is also commonly used as a voltage regulator in power supplies and other electronic circuits.
Working Principle
The FDD6030L is a field-effect transistor (FET), which means that it works by controlling the flow of current through a channel in the semiconductor material. The flow of current can be “turned on” or “turned off” by applying a voltage to the gate. When the voltage is applied, the channel is opened, allowing for a current to flow through. When the voltage is not applied, the channel is closed, preventing the current from flowing. The amount of current that can be controlled depends on the size of the channel, the voltage applied, and the type of FET used.
The FDD6030L is a dual-gate mosfet, meaning that it has two gates. The first gate is used to control the voltage applied to the channel, and the second gate is used to control the current flowing through the channel. The dual-gate design allows for more precise control of current in a circuit, as well as more efficient use of the power available.
The FDD6030L is an excellent choice for a variety of applications, as it is reliable, efficient, and relatively inexpensive. Its wide range of applications and its ease of use make it a popular choice for many circuit designs.
The specific data is subject to PDF, and the above content is for reference
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