Allicdata Part #: | FDD6635TR-ND |
Manufacturer Part#: |
FDD6635 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 35V 15A DPAK |
More Detail: | N-Channel 35V 15A (Ta), 59A (Tc) 3.8W (Ta), 55W (T... |
DataSheet: | FDD6635 Datasheet/PDF |
Quantity: | 10000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 35V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta), 59A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 3.8W (Ta), 55W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-PAK (TO-252) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The FDD6635 is a power MOSFET that combines low on-resistance, high energy efficiency, high reliability and a low input voltage rating. The FDD6635 has a variety of applications and its working principle can be summarized in a few steps.
FDD6635 Application Field
Due to its high reliability and low input voltage rating, the FDD6635 is commonly used in automotive, power management, and other industrial applications. Specifically, the FDD6635 is suitable for applications such as:
- DC-DC conversion systems
- High side-switching applications
- On-board battery management systems
- Motor controls
- Portable, small and mid-power applications
The FDD6635 is capable of switching currents of up to 20A and can handle voltages up to 40V, making it suitable for most applications. In addition, it has a low on-resistance of 4mΩ, which ensures a low voltage drop over the device and therefore an efficient power transfer.
FDD6635 Working Principle
The FDD6635 is a three-terminal power MOSFET. It works by using the Gate terminal to control the flow of current from the Source terminal to the Drain terminal. When the Gate terminal is at a positive voltage compared to the Source terminal, the power MOSFET is “on”, allowing current to pass through the device.
When the Gate voltage is lower than the Source voltage, the device is “off” and no current can flow through it. The FDD6635 uses a depletion-mode design, which means that the power MOSFET is off when the Gate voltage is zero. This eliminates the need for an external pull-down circuit, unlike an enhancement-mode design.
The FDD6635 is designed to operate at an input voltage of 4.5-18V, making it more suitable for automotive and other portable applications. The device also features built-in avalanche protection, which enables it to safely switch higher voltages. Additionally, the FDD6635 is equipped with temperature protection and current limiting features, which help to ensure reliable operation and improved device lifetime.
The FDD6635 is an ideal choice for switching applications that require high accuracy and minimal power dissipation. It can be used for motor control, power management, and other high-power switching applications. Due to its low on-resistance and high energy efficiency, the FDD6635 provides excellent performance and improved device lifetime.
The specific data is subject to PDF, and the above content is for reference
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