FDD6680AS Discrete Semiconductor Products

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The FDD6680AS is an advanced N-channel enhancement mode power MOSFET (Metal-Oxide-Semiconductor Field-Effect-Transistor) manufactured by Fairchild Semiconductor. It is a highly efficient transisitor commonly used in a variety of application fields due to its smaller footprint and other advantages over traditional transistors. This article will discuss the various application fields and the working principles of the FDD6680AS.

Applications of the FDD6680AS

The FDD6680AS is a popular choice for a wide range of applications where a small physical size and high power efficiency are needed, such as motor speed control, voltage regulation and power supply designs. It is also used in motor controllers and switching power supplies, often in combination with other power MOSFETs. Moreover, the FDD6680AS can be used as part of converters and voltage regulators, as well as DC/DC converters and SMPS (switched-mode power supplies).

The FDD6680AS is also employed in telecommunications applications. It is designed to work in synchronous and asynchronous motor speed control along with AC motor control, allowing current and voltage conversion to be done with minimal influence from external factors such as temperature and humidity. Additionally, the device can be used in DC/DC converters, phase shifted full bridge power supplies, and power line communications.

In automotive applications, the FDD6680AS is typically used as an electronic brake control, as well as in fuel injection systems, light applications with HIDs, and motors used in body control modules. Its high current densities and exceptionally low RDS(on) (on-state resistance) are both highly advantageous in these applications.

Working Principle of the FDD6680AS

In a MOSFET, the action of a gate voltage on an insulated gate electrode alters the conductivity of the transistor channel. This change in conductivity is called the MOSFET device function, which is responsible for the FDD6680AS’s unique characteristics and power efficiency.

The FDD6680AS utilizes an N-type MOSFET design. The N-type MOSFET has a majority of electrons at the source and drain relative to the gate, making it possible to control the majority carriers at the gate. This structure allows the FDD6680AS to block voltages up to 100 V and handle 50 A of continuous drain current.

The FDD6680AS has an exceptionally low RDS(on) rating of 0.0020 Ohm, making it one of the most efficient MOSFETs available. This low RDS(on) rating allows the device to have almost no power dissipation, creating an ultra-low on-state resistance that helps increase power efficiency. Additionally, the FDD6680AS is designed to provide high switching speeds and fast switching transitions, making it a great choice for high-speed applications.

Conclusion

The FDD6680AS is a highly efficient N-channel enhancement mode power MOSFET from Fairchild Semiconductor. It offers excellent performance and high power efficiency in a variety of different application fields, including motor speed control, voltage regulation, power supply designs, DC/DC converters, fuel injection systems, HID lighting, and body control modules. The device is able to provide a high current density and exceptionally low RDS(on) rating of 0.0020 Ohm, which helps increase its power efficiency. Additionally, it is designed to offer fast switching speeds and transitions, making it ideal for high-speed applications.

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