FDD6N50TF Allicdata Electronics

FDD6N50TF Discrete Semiconductor Products

Allicdata Part #:

FDD6N50TFTR-ND

Manufacturer Part#:

FDD6N50TF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 6A DPAK
More Detail: N-Channel 500V 6A (Tc) 89W (Tc) Surface Mount D-Pa...
DataSheet: FDD6N50TF datasheetFDD6N50TF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V
Base Part Number: FDD6N50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 89W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V
Vgs (Max): ±30V
Series: UniFET™
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 900 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FDD6N50TF is a N-channel MOSFET commonly used in power switch circuits. It is a type of single-gate field-effect transistor (FET), and is designed for use in high-power applications.

MOSFETs are used in a variety of applications, and are particularly well suited for use in power supplies and power switch circuits. The FDD6N50TF is a high-power MOSFET that is well suited for these types of applications. It is an N-channel MOSFET, meaning that it is constructed with two types of transistors, an N-type transistor and a P-type transistor. These types of transistors are commonly used in power switches and other high-power circuits.

The FDD6N50TF has a maximum drain-source voltage of 500V, and a maximum drain current of 6A. It also has a drain-source on-state resistance of 0.32 ohms. This low on-state resistance allows for lower power losses in high-power applications. These characteristics make it well suited for use in power switch circuits, as well as for switching high-power circuits on and off quickly.

The working principle of the FDD6N50TF is based on the principle of charge-coupled electrostatic gates. Charge-coupled electrostatic gates (CCGs) are MOSFETs with two closely spaced gates, one on either side of the channel. These gates are then connected to a voltage source, which controls the flow of current through the transistor. When a positive voltage is applied to the gate, the gate attracts electrons, which causes holes to be generated in the channel between the gates. The holes can then pass electrons, which allows current to flow through the channel. When the voltage is removed, the gate loses its hold on the electrons, which stops the current flow.

The FDD6N50TF is an excellent choice for high-power applications, such as power switches and high-power circuits. It is also a reliable and efficient device, with its low on-state resistance and high current rating. Its ability to quickly switch on and off makes it well suited for use in high-power circuits. The FDD6N50TF is an invaluable component for a wide range of applications, making it a popular choice for many engineers and hobbyists.

The specific data is subject to PDF, and the above content is for reference

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