FDD6688S

Vgs(th) (Max) @ Id:	3V @ 1mA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-PAK (TO-252)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	69W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3290pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	81nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	5.1 mOhm @ 18.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	88A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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FDD6688S Application Field and Working Principle

With the development of integrated circuit technology, FDD6688S power MOSFETs, as a key active component in the power electronics industry, play an important role in the related areas of power conversion, such as motor drive, power supply and automotive industry, etc.This article will introduce the application field and working principle of FDD6688S.

1. Application Field

FDD6688S power MOSFETs have the characteristics of low on-state resistance, soft turn off, small gate charge and fast switching speed, which make them quite suitable for many power electronic applications like motor drive, power supply and energy storage, etc. Here are some common application areas.

1.1 Motor Drive

FDD6688S are widely used in motor drive applications that require high-frequency operation and fast switching speed, such as AC servo drives, DC motor drives and uninterruptible power supplies (UPSs). Its soft turn-off characteristics help reduce conducted EMI incurs.

1.2 Automotive Applications

FDD6688S is an ideal choice for automotive power solutions. It offers low on-state resistance and fast switching speed, which can reduce power losses and improve the efficiency of the power system. It is also robust enough for the harsh environment in automotive applications.

1.3 Power Supply

FDD6688S can also be used in power supply applications such as uninterrupted power supplies (UPS), LCD TVs, set-top boxes and digital signal processing (DSP). Its low on-state resistance and fast switching speed can help improve the efficiency of the power supply system.

2. Working Principle

FDD6688S power MOSFETs are insulated gate bipolar transistors (IGBTs), which combine the properties of both a bipolar junction transistor (BJT) and a field effect transistor (FET).Like BJTs, they have an emitter, collector and base terminal. However, unlike BJTs, FDD6688S power MOSFETs don’t need a base voltage or current to turn on. The gate is insulated from drain-source, so the gate voltage is the only factor that controls the drain-source current.When a positive voltage is applied to the gate terminal, the a-Si layer between the gate and source attracts electrons, creating an inversion channel between source and drain. This allows current to flow between source and drain and turns the device on. Inverting the voltage will turn the device off.

Conclusion

FDD6688S power MOSFETs are widely used in motor drive, power supply and automotive application due to their low on-state resistance, soft turn off, small gate charge and fast switching speed. And their working principle is quite simple: applying a positive voltage to the gate terminal will turn the device on, and inverting the voltage will turn the device off.

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