FDD6612A Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDD6612A is a field effect transistor (FET) used in a variety of electronic applications, ranging from general-purpose amplifiers to specialized power control circuits. It is a metal–oxide–semiconductor field-effect transistor (MOSFET), specifically a single enhancement-mode N Channel MOSFET. It forms part of the popular FDD66 family of MOSFETs manufactured by Fairchild Semiconductor Corporation.

Electrical Characteristics

The FDD6612A contains two pins, or terminals, referred to as the source and drain. Electrons flow from the source to the drain, but are physically blocked from passing between both pins by an insulation layer of silicon dioxide. The amount of current allowed to pass determines its resistance, which is the key to the function of this FET. The amount of current passing between source and drain is controlled by a positively-charged fifth terminal, the gate. When the gate is positively charged, electrons from the source are strongly attracted to it, drawing a current from the drain. When the gate is left neutral or shorted to ground, resistance increases and the FET stops conducting.

The following are the electrical specifications of the FDD6612A:

• Drain-Source Voltage: 30V (VDS)
• Gate-Source Voltage: +-20V (VGS)
• Drain Current: 5A (ID)
• Static Drain-Source On-Resistance: 0.014Ω (RDS(ON))
• Switching Time: 40nS

Application Field

The FDD6612A can be used for a variety of applications, most notably in power control circuits. For example, it can be used in industrial amplifiers to convert signals from various AC sources, such as motors and transformers, into DC signals. It can also be used in switching power supply circuits, where it acts as an efficient, low-voltage switch for efficiently controlling and distributing power to electric equipment. Additionally, it can be used in motor controllers, audio amplifiers and RF amplifiers.

The FDD6612A is also widely used in voltage regulator modules (VRMs) found in desktop and laptop computers. These components provide consistent and stable power to the motherboard and other computer components. Due to its low resistance, high current, and switching time, the FDD6612A is well suited for this purpose.

Working Principle

As mentioned above, the FDD6612A acts as an electronic switch, allowing or blocking electrons from passing through the source and drain pins. This is achieved by applying a voltage to the gate; when a positive voltage is applied, electrons are attracted to the gate, thus lowering the resistance between source and drain. This increase in current causes the transistor to “open”, or switch on. Similarly, when a negative voltage is applied, electrons are repelled and the current is blocked, thus “closing” the switch.

This transistor is specially designed to handle large currents (up to 5A) and remain in the switching state almost instantaneously, allowing it to switch high currents with limited distortion and power losses. The low resistance of this FET also increases efficiency by allowing more power to be delivered with less heat dissipation, making it suitable for a variety of power control applications.

Conclusion

The FDD6612A is an enhancement-mode N Channel MOSFET featuring a low RDS(ON) and a high current-carrying capacity. Its flexibility and low impedance make it a suitable component for a variety of power control applications, particularly those requiring the efficient regulation of current and voltage. Its fast switching time, negligible power losses, and relatively low cost make it a popular choice for various electronics projects.

The specific data is subject to PDF, and the above content is for reference