FDD6N50TM Discrete Semiconductor Products

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The FDD6N50TM is a monolithic N-channel, insulated-gate, field-effect transistor (IGFET) of the power MOSFET type. This is a high voltage and high-current device in a conventional TO-220 and D2PAK package. It is designed to endure extreme environment conditions and is commonly used for a wide range of industrial and consumer applications for its low on-resistance and fast switching speed.

The FDD6N50TM is a MOSFET transistor that utilizes an insulated gate to control the flow of electrons from the drain to source. It essentially operates like a switch, and is capable of very low on-resistance. This reduces the amount of energy needed to switch from the OFF to ON state, allowing for faster operation. It is constructed using multiple layers of silicon, polysilicon and dielectric material which allows for voltage and current ratings as high as 600 and 8A respectively.

Due to its low on-resistance and fast switching speed, the FDD6N50TM is designed to be used in a variety of applications. It is commonly utilized in power switching, lighting control, motor speed control, industrial inverters and consumer appliances. It is suitable for applications operating at high frequency between 0.1 to 10 MHz. It can also be used to interface low-voltage control signals with low-voltage equipment such as microprocessors and controllers.

The FDD6N50TM is available in a selection of form factors including TO-220 and D2PAK. It has a drain-to-source voltage rating (VDSS) of 600V and a continuous drain current rating (ID) of 8A. It is also capable of withstanding up to a 10 μs current surge of 16A (IDM) at a junction temperature of 25°C. It has a threshold voltage (VGS) of 4V and an on-resistance (RDS(on)) of 3.2 ohms.

The FDD6N50TM has a gate-to-source voltage rating (VGS) of ±20V, which indicates that the gate can operate at different voltages to the drain. This allows for better control over the switching action of the device, providing flexibility in the design of the power switching circuit. This also reduces the power dissipation of the device, allowing for greater efficiency. The FDD6N50TM also features an avalanche energy rating of 4.7 mJ, making it suitable for applications such as motor speed control where high currents are likely to be encountered.

In summary, the FDD6N50TM is a high-voltage and high-current MOSFET transistor device from the power MOSFET family. It is designed to withstanding extreme environment conditions and is commonly used in a wide range of applications for its low on-resistance and fast switching speed. It is available in a selection of form factors with a drain-to-source voltage rating of 600V and a continuous drain current rating of 8A. It has a gate-to-source voltage rating of ±20V and an on-resistance of 3.2 ohms. It also features an avalanche energy rating of 4.7 mJ which makes it suitable for applications that are likely to encounter high currents.

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