FDD6630A Discrete Semiconductor Products |
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Allicdata Part #: | FDD6630ATR-ND |
Manufacturer Part#: |
FDD6630A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 21A D-PAK |
More Detail: | N-Channel 30V 21A (Ta) 28W (Ta) Surface Mount TO-2... |
DataSheet: | FDD6630A Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 28W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 462pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 7.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FDD6630A is a single high voltage insulated gate MOSFET that operates in extrmely low frequencies. The technology used in FDD6630A is GaN-on-SiC, where SiC is a wide bandgap semiconductor that provides superior properties when compared to traditional silicon-based semiconductors. FDD6630A has a maximum drain-source voltage of 650V, a maximum drain current of 30A, and an internal gate-source capacitance of 0.62pF.
FDD6630A has applications in high-voltage switching circuits and in medium or high-power converters. Its high voltage and current performance makes it ideal for controlling high-voltage loads such as air conditioning systems, elevators, or large-scale motors. It can also be used in DC-DC converters, LED drivers, and renewable energy applications such as photovoltaics and wind turbines.
FDD6630A works by taking advantage of the insulated-gate voltage-controlled MOSFET (IGV-MOSFET) structure. The MOSFET has two independent layers of metal oxide semiconductor (MOS) material separated by an electrically insulating layer of silicon dioxide. This forms an insulated gate that can control a conduction channel between the source and drain regions depending on the voltage between the gate and source. When a positive voltage is applied to the gate, the MOSFET\'s source-drain channel will conduct current, allowing N-channel MOSFET devices, such as the FDD6630A, to operate as a high-voltage switch.
FDD6630A also offers superior high-frequency performance and switching speed compared to traditional Si-MOSFETs. This is due to the use of silicon carbide instead of silicon in its construction which gives FDD6630A a lower on-state resistance and a faster gate turn-off time. This makes it suitable for high-frequency and high-speed switching applications such as high-voltage DC-DC converters, resonant converters and other pulse-width modulation (PWM) control applications.
FDD6630A has a wide range of applications due to its high voltage performance, high current handling capabilities, and fast switching speed. It can be used in power converters, DC-DC converters, resonant converters, LED drivers, and renewable energy applications, and is ideal for controlling high-voltage loads such as air conditioning systems, elevators and large-scale motors.
The specific data is subject to PDF, and the above content is for reference
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