FDD6630A Discrete Semiconductor Products |
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| Allicdata Part #: | FDD6630ATR-ND |
| Manufacturer Part#: |
FDD6630A |
| Price: | $ 0.18 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 21A D-PAK |
| More Detail: | N-Channel 30V 21A (Ta) 28W (Ta) Surface Mount TO-2... |
| DataSheet: | FDD6630A Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.18000 |
| 10 +: | $ 0.17460 |
| 100 +: | $ 0.17100 |
| 1000 +: | $ 0.16740 |
| 10000 +: | $ 0.16200 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 28W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 462pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 5V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 35 mOhm @ 7.6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 21A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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FDD6630A is a single high voltage insulated gate MOSFET that operates in extrmely low frequencies. The technology used in FDD6630A is GaN-on-SiC, where SiC is a wide bandgap semiconductor that provides superior properties when compared to traditional silicon-based semiconductors. FDD6630A has a maximum drain-source voltage of 650V, a maximum drain current of 30A, and an internal gate-source capacitance of 0.62pF.
FDD6630A has applications in high-voltage switching circuits and in medium or high-power converters. Its high voltage and current performance makes it ideal for controlling high-voltage loads such as air conditioning systems, elevators, or large-scale motors. It can also be used in DC-DC converters, LED drivers, and renewable energy applications such as photovoltaics and wind turbines.
FDD6630A works by taking advantage of the insulated-gate voltage-controlled MOSFET (IGV-MOSFET) structure. The MOSFET has two independent layers of metal oxide semiconductor (MOS) material separated by an electrically insulating layer of silicon dioxide. This forms an insulated gate that can control a conduction channel between the source and drain regions depending on the voltage between the gate and source. When a positive voltage is applied to the gate, the MOSFET\'s source-drain channel will conduct current, allowing N-channel MOSFET devices, such as the FDD6630A, to operate as a high-voltage switch.
FDD6630A also offers superior high-frequency performance and switching speed compared to traditional Si-MOSFETs. This is due to the use of silicon carbide instead of silicon in its construction which gives FDD6630A a lower on-state resistance and a faster gate turn-off time. This makes it suitable for high-frequency and high-speed switching applications such as high-voltage DC-DC converters, resonant converters and other pulse-width modulation (PWM) control applications.
FDD6630A has a wide range of applications due to its high voltage performance, high current handling capabilities, and fast switching speed. It can be used in power converters, DC-DC converters, resonant converters, LED drivers, and renewable energy applications, and is ideal for controlling high-voltage loads such as air conditioning systems, elevators and large-scale motors.
The specific data is subject to PDF, and the above content is for reference
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FDD6630A Datasheet/PDF