FDD6630A Allicdata Electronics

FDD6630A Discrete Semiconductor Products

Allicdata Part #:

FDD6630ATR-ND

Manufacturer Part#:

FDD6630A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 21A D-PAK
More Detail: N-Channel 30V 21A (Ta) 28W (Ta) Surface Mount TO-2...
DataSheet: FDD6630A datasheetFDD6630A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 28W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 462pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 35 mOhm @ 7.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FDD6630A is a single high voltage insulated gate MOSFET that operates in extrmely low frequencies. The technology used in FDD6630A is GaN-on-SiC, where SiC is a wide bandgap semiconductor that provides superior properties when compared to traditional silicon-based semiconductors. FDD6630A has a maximum drain-source voltage of 650V, a maximum drain current of 30A, and an internal gate-source capacitance of 0.62pF.

FDD6630A has applications in high-voltage switching circuits and in medium or high-power converters. Its high voltage and current performance makes it ideal for controlling high-voltage loads such as air conditioning systems, elevators, or large-scale motors. It can also be used in DC-DC converters, LED drivers, and renewable energy applications such as photovoltaics and wind turbines.

FDD6630A works by taking advantage of the insulated-gate voltage-controlled MOSFET (IGV-MOSFET) structure. The MOSFET has two independent layers of metal oxide semiconductor (MOS) material separated by an electrically insulating layer of silicon dioxide. This forms an insulated gate that can control a conduction channel between the source and drain regions depending on the voltage between the gate and source. When a positive voltage is applied to the gate, the MOSFET\'s source-drain channel will conduct current, allowing N-channel MOSFET devices, such as the FDD6630A, to operate as a high-voltage switch.

FDD6630A also offers superior high-frequency performance and switching speed compared to traditional Si-MOSFETs. This is due to the use of silicon carbide instead of silicon in its construction which gives FDD6630A a lower on-state resistance and a faster gate turn-off time. This makes it suitable for high-frequency and high-speed switching applications such as high-voltage DC-DC converters, resonant converters and other pulse-width modulation (PWM) control applications.

FDD6630A has a wide range of applications due to its high voltage performance, high current handling capabilities, and fast switching speed. It can be used in power converters, DC-DC converters, resonant converters, LED drivers, and renewable energy applications, and is ideal for controlling high-voltage loads such as air conditioning systems, elevators and large-scale motors.

The specific data is subject to PDF, and the above content is for reference

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