FDD6780 Discrete Semiconductor Products

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The FDD6780 MOSFET is a metal-oxide-semiconductor field-effect transistor (MOSFET) that has been built from the latest state-of-the-art semiconductor technology. It is designed to provide superior performance, superior reliability, and superior power, thermal and electrical characteristics in power management applications such as AC/DC converters, PFC, high-efficiency and high-power applications. The FDD6780 is available in an industry-standard 3-lead TO-220 package.

The FDD6780 has an unmatched combination of breakdown voltage, on-resistance, and low gate charge. It is a high voltage MOSFET with a maximum drain-source voltage rating of 350V and a maximum drain current of 34A. The device is optimized to provide superior performance in demanding applications. It has an excellent input-capacitance ratio with minimized gate charge and a temperature-independent on-resistance. The ultra-low gate charge ensures low gate losses and excellent thermal performance.

The FDD6780 offers substantial performance improvements in comparison to similar devices. This device was designed for demanding power management applications and offers a number of advantages including high efficiency and immunity to latch-up. The low Coss ensures high efficiency in converter applications, while the low gate charge eliminates the need for heat sinking. The FDD6780 is also immune to latch-up and has excellent thermal capability, without the need for additional thermal management.

The FDD6780 features an N-channel MOSFET construction and is able to directly switch of high voltage AC/DC and PFC applications, as well as high efficiency switching converters. It is designed for excellent current conduction and can handle up to 34A drain current, making it ideal for high-power applications. The low input capacitance and gate charge give the device fast switching speeds and low switching losses.

The FDD6780 has a simple operating principle; it forms a majority-carrier conducting channel between its source and drain when there is a positive voltage on its gate compared to its source. The channel is controlled by the gate-source voltage, so if the gate voltage is lowered, the channel is pinched off, and the drain-source current drops to near zero. The device\'s low on-resistance and fast switching speeds make it suitable for high switching frequency applications such as DC-DC converters.

The FDD6780 MOSFET is an innovative, high voltage device that offers superior performance in power management applications. Its combination of breakdown voltage, on-resistance and low gate charge makes it an ideal choice for applications requiring high efficiency, high power and fast switching speeds. Its N-channel construction and low input capacitance enable the device to operate at high frequencies and the low gate charge ensures low gate losses and excellent thermal performance. It is a highly reliable device and its latch-up immunity makes it the ideal choice for demanding power management applications.

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