Allicdata Part #: | FDD6632-ND |
Manufacturer Part#: |
FDD6632 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 9A D-PAK |
More Detail: | N-Channel 30V 9A (Tc) 15W (Tc) Surface Mount D-PAK... |
DataSheet: | FDD6632 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 15W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 255pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 5V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FDD6632 is a type of insulated-gate field-effect (IGFET) transistor. It is a single-gate FET, a type of field-effect transistor (FET) which uses a single gate to control the flow of current. The FDD6632 is a high-voltage N-channel device, capable of operating up to 800V. It is widely used in professional lighting applications, such as motion detectors and landscape lighting.
The FDD6632 is manufactured in a monolithically integrated circuit (MTIC). The MTIC provides improved reliability and reduced size compared to discrete devices. The FDD6632 is manufactured using a high-resistivity silicon substrate, which is then treated with a gate oxide layer. This oxide layer insulates the gate from the substrate and ensures a secure connection between the gate and the substrate.
The basic principle of operation of the FDD6632 is relatively straightforward. The FET is operated by applying a voltage to the gate. This voltage creates an electric field between the gate and the semiconductor substrate, which in turn generates an electric current inside the substrate. When the current flow is increased, more electrons are pushed out of the semiconductor and the transistor is turned “on”. When the current flow decreases, fewer electrons are pushed out of the semiconductor and the transistor is turned “off”.
The FDD6632 is commonly used in motion detection and landscape lighting applications. It can be used to detect movement by monitoring changes in the voltage on the gate. When the voltage reaches a certain threshold, the transistor is turned “on” and the motion detector is activated. In landscape lighting applications, the FDD6632 can be used to control the intensity of the light by controlling the amount of current flowing through it. By adjusting the voltage on the gate, the intensity of the lights can be varied.
The FDD6632 is also used in HVAC (heating, ventilation, and air conditioning) and refrigeration systems. In these applications, the FET can be used to control the current flowing through heaters and cooling coils, allowing for precise control of the temperature in a room or refrigeration system. The FET can also be used to control the speed of motors and fans, allowing the user to customize their cooling or heating needs.
The FDD6632 is a versatile and reliable insulated-gate FET and can be used for a variety of different applications. Its effectiveness in motion detection and landscape lighting applications make it an ideal choice for many projects. Its high-voltage capability allows it to be used in HVAC and refrigeration systems, providing precise control of the temperature and motor speeds. Additionally, its MOCS design ensures that the FET will maintain a secure connection between the gate and the semiconductor substrate, increasing reliability and reducing the size of the transistor.
The specific data is subject to PDF, and the above content is for reference
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