FDD6N20TM

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Introduction

The FDD6N20TM is a part from Fairchild Semiconductor’s N-channel enhancement mode power field-effect transistors (FETs) portfolio. It is a vertical single-die, 600V, 6.4A, 20A RDS(on) MOSFET designed for excellent switch performance and robust design. The FDD6N20TM is offered in a customer-friendly H-Pak® TO-220 package and is ideal for multiple applications including battery management in hybrid and electric vehicles, SMPS and bulk power applications, as well as general purpose and high-current switching.

Application Field

The FDD6N20TM is built with a ‘floating channel’ and is designed to operate with the highest reliability even under extreme climatic conditions. It also offers excellent switching and high-current carrying capability making it an ideal choice for consumer products, telecommunications, computer/network communications and other industrial applications. Additionally, the FDD6N20TM is especially suitable for battery management applications in hybrid and electric vehicles where it offers an industry-leading enhancement mode power MOSFET footprint.

FDD6N20TM implements advanced paralleling techniques for cost and space savings, allowing one device to replace two or more paralleled standard MOSFETs. The device is effective in reducing common source resistance (RDS(on)) and can be easily paralleled to increase its output current.

Working Principle

The FDD6N20TM features fairly low gate charge (Qg) and related gate-drain capacitance (Cgd), allowing for efficient operation at high frequencies. It also has low RDS(on) to reduce switching losses, which is especially beneficial in battery management and other switch mode power supply (SMPS) applications. The FDD6N20TM has a low threshold voltage (Vth) of 4V and a maximum drain-source voltage (VDS) rating of 600V.

The FDD6N20TM is an N-channel enhancement mode MOSFET (metal–oxide–semiconductor field-effect transistor). It can be used to switch current in a circuit, and also acts as an amplifier. The device has a gate that drives an N-channel MOSFET, which consists of source, gate and drain electrodes. When the gate voltage is higher than the threshold voltage (Vth), the drain-source voltage, current, and power can be controlled by changing the gate voltage.

The FDD6N20TM features temperature protection, avalanche energy rating and excellent dynamic performance. It has an avalanche voltage rating of 540V and can drain an energy of 2.52mJ. It is offered in a simply-designed H-Pak package which provides an improved thermal resistance and costs savings as compared to conventional packages.

Conclusion

To sum up, the FDD6N20TM is a 600V, 6.4A, 20A RDS(on) MOSFET designed for excellent switch performance and robust operation. It is a single-die, vertical N-channel MOSFET and is ideal for consumer products, telecom, computer/network and industrial applications. The device has an avalanche voltage rating of 540V and can drain an energy of 2.52mJ. It implements advanced paralleling techniques for cost and space savings, offering excellent switching and high-current carrying capability.

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