FDD6796A Discrete Semiconductor Products |
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Allicdata Part #: | FDD6796ATR-ND |
Manufacturer Part#: |
FDD6796A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET NCH 25V 20A DPAK |
More Detail: | N-Channel 25V 20A (Ta), 40A (Tc) 3.7W (Ta), 42W (T... |
DataSheet: | FDD6796A Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1780pF @ 13V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta), 40A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FDD6796A is a FET or Field Effect Transistor, which is a type of transistor used as an electrical switch or amplifier. It is a single MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, which is a type of field-effect transistor (FET) that utilizes metal–oxide–semiconductor (MOS) technology.
The FDD6796A is commonly used in a variety of applications, including power supplies and power management circuitry, amplifiers, audio equipment, motor controllers, and control systems. Its high switching speed, low power consumption, and low on-state resistance make it an ideal choice for these types of applications.
The working principle of the FDD6796A is quite simple. On the semiconductor surface, it has two electrodes: the source and drain electrodes. An electric field is applied to the channel between the source and drain electrodes. This field creates an electric-field-induced current in the channel. The channel\'s resistance decreases as the electric field intensity increases, allowing current to flow through the channel. This current is the output of the FET.
In terms of its power handling capabilities, the FDD6796A has a breakdown voltage of 600V and a minimum drain-source off-state resistance of 4Ohm. It also has a maximum drain current of 80A and a maximum storage temperature of 175°C. It is also RoHS compliant, making it an environmentally-friendly choice.
The FDD6796A also has a number of benefits over other types of MOSFETs. One major advantage is its low on-state resistance, which enables it to handle higher power loads with greater efficiency. In addition, its fast switching speed and ability to handle high surge currents make it well-suited for power supplies and motors.
Overall, the FDD6796A is a versatile, high-performance MOSFET that is well-suited for a variety of applications. Its fast switching speed, low power consumption, and low on-state resistance make it an effective choice for power supplies and motor control. Additionally, its robust power handling capabilities enable it to handle high surge currents and store large amounts of energy.
The specific data is subject to PDF, and the above content is for reference
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