FDD6780A Discrete Semiconductor Products |
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Allicdata Part #: | FDD6780ATR-ND |
Manufacturer Part#: |
FDD6780A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 16.4A DPAK |
More Detail: | N-Channel 25V 16.4A (Ta), 30A (Tc) 3.7W (Ta), 32.6... |
DataSheet: | FDD6780A Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 32.6W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1235pF @ 13V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 8.6 mOhm @ 16.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16.4A (Ta), 30A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FDD6780A MOSFET is a popular choice for a wide range of industries when switching high power loads with reliability and low noise. As a single-polarity N-channel MOSFET, FDD6780A mainly used in drive circuits and DC-to-DC converters, or any other applications that require reliable high power operation. This device is capable of handling currents up to 60A and a wide 2-60V operating range. Its low on-resistance RDS(on) makes it suitable for switching peak loads up to 540W.
When selecting the MOSFET for the task, the higher the RDS(on) the higher power loss through the device is expected. For the FDD6780A, the lower RDS(on) translates to lower power loss, allowing for a more efficient operation.
FDD6780A MOSFET consists of a single MOSFET integrated with a Schottky diode. The diode functions as a body diode and eliminates the need for an extra anti-parallel diode in the design. This means a lower power loss for a simple and compact design. The device also features low Miller capacitance. This helps to reduce ringing and noise in the switching circuit.
The principle used to operate the FDD6780A is simple. A voltage is applied to the gate of the MOSFET and a current flows through the drain and the source. The current passing through the drain is controlled by the voltage applied to the gate. When the input voltage is higher than the threshold voltage, the current passes through the drain and the source. The current is limited to the maximum rating of the device which is 60A. When the input voltage is lower than the threshold voltage, no current can flow through the device.
The FDD6780A MOSFET is cost-effective, efficient, and can easily be incorporated into a wide range of applications. Its high current carrying capacity and low power dissipation allow for efficient operation. Its low Miller capacitance prevents the MOSFET from ringing and generates low levels of noise.
FDD6780A MOSFET is commonly used for driving solenoid actuators, DC-to-DC converters, DC motors, and high-current loads. This versatile component can also be used in low voltage circuits, such as in point-of-load converters powering low voltage memory chips. Other applications for FDD6780A MOSFETs include power management, lighting ballast, and uninterruptible power supply.
The ability of FDD6780A to switch high currents with low noise and high reliability makes it an ideal choice for a wide array of applications. Its easy integration into existing circuits and cost-effectiveness combine to make it an attractive, highly desirable component.
The specific data is subject to PDF, and the above content is for reference
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